SQM50020EL_GE3 Datasheet SQM50020EL_GE3 | P1-P3

SQM50020EL

www.vishay.com

Vishay Siliconix

S15-0517-Rev. A, 13-Mar-15

1

Document Number: 65377

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET

®

power MOSFET

• Package with low thermal resistance

• AEC-Q101 qualified

• 100 % R

g

and UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR4 material).

PRODUCT SUMMARY

V

DS

(V) 60

R

DS(on)

(Ω) at V

GS

= 10 V 0.0020

R

DS(on)

(Ω) at V

GS

= 4.5 V 0.0025

I

D

(A) 120

Configuration Single

D

G

S

N-Channel MOSFET

TO-263

Top View

G

D

S

G

D

S

ORDERING INFORMATION

Package TO-263

Lead (Pb)-free and Halogen-free SQM50020EL-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

60

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current

a

T

C

= 25 °C

I

D

120

A

T

C

= 125 °C 120

Continuous Source Current (Diode Conduction)

a

I

S

120

Pulsed Drain Current

b

I

DM

300

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

75

Single Pulse Avalanche Energy E

AS

281 mJ

Maximum Power Dissipation

b

T

C

= 25 °C

P

D

375

W

T

C

= 125 °C 125

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

c

R

thJA

40

°C/W

Junction-to-Case (Drain) R

thJC

0.4

SQM50020EL

www.vishay.com

Vishay Siliconix

S15-0517-Rev. A, 13-Mar-15

2

Document Number: 65377

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 60 - -

V

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 1.5 2.0 2.5

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V V

DS

= 60 V - - 1

μA

V

GS

= 0 V V

DS

= 60 V, T

J

= 125 °C - - 50

V

GS

= 0 V V

DS

= 60 V, T

J

= 175 °C - - 1.5 mA

On-State Drain Current

a

I

D(on)

V

GS

= 10 V V

DS

≥ 5 V 120 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V I

D

= 30 A - 0.0016 0.0020

Ω

V

GS

= 10 V I

D

= 30 A, T

J

= 125 °C - - 0.0031

V

GS

= 10 V I

D

= 30 A, T

J

= 175 °C - - 0.0037

V

GS

= 4.5 V I

D

= 20 A - 0.0020 0.0025

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 30 A - 164 - S

Dynamic

b

Input Capacitance C

iss

V

GS

= 0 V V

DS

= 25 V, f = 1 MHz

- 12 060 15 100

pF Output Capacitance C

oss

- 5750 7200

Reverse Transfer Capacitance C

rss

- 860 1100

Total Gate Charge

c

Q

g

V

GS

= 10 V V

DS

= 30 V, I

D

= 80 A

- 128 200

nC Gate-Source Charge

c

Q

gs

-33-

Gate-Drain Charge

c

Q

gd

-11-

Gate Resistance R

g

f = 1 MHz 0.8 1.68 2.6 Ω

Turn-On Delay Time

c

t

d(on)

V

DD

= 30 V, R

L

= 0.375 Ω

I

D

≅ 80 A, V

GEN

= 10 V, R

g

= 1 Ω

-2025

ns

Rise Time

c

t

r

-1540

Turn-Off Delay Time

c

t

d(off)

-65100

Fall Time

c

t

f

-1220

Source-Drain Diode Ratings and Characteristics

b

Pulsed Current

a

I

SM

--300A

Forward Voltage V

SD

I

F

= 80 A, V

GS

= 0 V - 0.88 1.5 V

SQM50020EL

www.vishay.com

Vishay Siliconix

S15-0517-Rev. A, 13-Mar-15

3

Document Number: 65377

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

Output Characteristics

Transconductance

Capacitance

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

40

80

120

160

200

0246810

I

D

- Drain Current (A)

V

DS

-Drain-to-Source Voltage (V)

V

GS

= 10 V thru 4 V

V

GS

= 3 V

0

60

120

180

240

300

0 1020304050

g

fs

-Transconductance (S)

I

D

- Drain Current (A)

T

C

= 125 °C

T

C

= - 55 °C

T

C

= 25 °C

0

3600

7200

10 800

14 400

18 000

0 102030405060

C - Capacitance (pF)

V

DS

-Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0

32

64

96

128

160

0246810

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= - 55 °C

T

C

= 125 °C

T

C

= 25 °C

0.000

0.001

0.002

0.003

0.004

0.005

0 20 40 60 80 100 120

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 4.5 V

V

GS

= 10 V

0

2

4

6

8

10

0 306090120150

V

GS

- Gate-to-Source Voltage (V)

Q

g

-Total Gate Charge (nC)

I

D

= 80 A

SQM50020EL_GE3

SQM50020EL_GE3

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