2004 Jul 30 3
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
PDTA115E series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL
PINNING
PIN DESCRIPTION
PDTA115ES 1 base
2 collector
3 emitter
PDTA115EE 1 base
PDTA115EEF 2 emitter
PDTA115EK 3 collector
PDTA115ET
PDTA115EU
PDTA115EM 1 base
2 emitter
3 collector
handbook, halfpage
MAM338
1
2
3
R1
R2
2
3
1
handbook, halfpage
MDB271
Top view
1
2
3
1
2
3
R1
R2
handbook, halfpage
MDB267
2
1
3
Bottom view
1
2
3
R1
R2
2004 Jul 30 4
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
PDTA115E series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PDTA115EE plastic surface mounted package; 3 leads SOT416
PDTA115EEF plastic surface mounted package; 3 leads SOT490
PDTA115EK plastic surface mounted package; 3 leads SOT346
PDTA115EM leadless ultra small plastic package; 3 solder lands; body
1.0
× 0.6 × 0.5 mm
SOT883
PDTA115ES plastic single-ended leaded (through hole) package; 3 leads SOT54
PDTA115ET plastic surface mounted package; 3 leads SOT23
PDTA115EU plastic surface mounted package; 3 leads SOT323
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter 50 V
V
CEO
collector-emitter voltage open base 50 V
V
EBO
emitter-base voltage open collector 10 V
V
I
input voltage
positive +10 V
negative 40 V
I
O
output current (DC) 20 mA
I
CM
peak collector current 100 mA
P
tot
total power dissipation T
amb
25 °C
SOT23 note 1 250 mW
SOT54 note 1 500 mW
SOT323 note 1 200 mW
SOT346 note 1 250 mW
SOT416 note 1 150 mW
SOT490 notes 1 and 2 250 mW
SOT883 notes 2 and 3 250 mW
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
T
amb
operating ambient temperature 65 +150 °C
2004 Jul 30 5
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
PDTA115E series
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient T
amb
25 °C
SOT23 note 1 500 K/W
SOT54 note 1 250 K/W
SOT323 note 1 625 K/W
SOT346 note 1 500 K/W
SOT416 note 1 833 K/W
SOT490 notes 1 and 2 500 K/W
SOT883 notes 2 and 3 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 50 V; I
E
= 0 A 100 nA
I
CEO
collector-emitter cut-off current V
CE
= 30 V; I
B
= 0 A 1 μA
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150 °C
50 μA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 A 50 μA
h
FE
DC current gain V
CE
= 5 V; I
C
= 5 mA 80
V
CEsat
collector-emitter saturation voltage I
C
= 5 mA; I
B
= 0.25 mA 150 mV
V
i(off)
input-off voltage I
C
= 100 μA; V
CE
= 5 V 1.2 0.5 V
V
i(on)
input-on voltage I
C
= 1 mA; V
CE
= 0.3 V 3 1.6 V
R1 input resistor 70 100 130 kΩ
resistor ratio 0.8 1 1.2
C
c
collector capacitance I
E
= i
e
= 0 A; V
CB
= 10 V;
f
= 1 MHz
3 pF
R2
R1
--------

PDTA115ES,126

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
TRANS PREBIAS PNP 500MW TO92-3
Lifecycle:
New from this manufacturer.
Delivery:
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