RB063L-30TE25

RB063L-30
Diodes
Schottky barrier diode
RB063L-30
z
zz
zApplications
High frequency rectification
For switching power supply
z
zz
zFeatures
1) Compact power mold type. (PMDS)
2) Ultra low V
F
/ Low I
R
.
3) V
RM
=30V guaranteed.
z
zz
zConstruction
Silicon epitaxial planar
z
zz
zExternal dimensions (Units : mm)
0.1
CATHODE MARK
4.5±0.2
2.6±0.2
2.0±0.2
1.2±0.3
1.5±0.2
55
5.0±0.3
+0.02
0.1
ROHM : PMDS
EIAJ :
JEDEC : SOD-106
Date of manufacture EX. 1999.12 9, C
z
zz
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
RM
Limits
30
Unit
V
Peak reverse voltage
V
R
30 V
DC reverse voltage
I
O
2A
Mean rectifying current
I
FSM
70 A
Tj 125
°C
Junction temperature
Tstg 40∼+125
°C
Storage temperature
180° half sine wave when mounted on glass epoxy PCBs.
Peak forward surge current
(60Hz·1 )
z
zz
z
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max. Unit Conditions
V
F
I
R
0.395
200
V
µA
I
F
=2.0A
V
R
=30V
RB063L-30
Diodes
z
zz
zElectrical characteristic curves (Ta=25°C)
FORWARD CURRENT : I
F
(A)
FORWARD VOLTAGE : V
F
(V)
Fig.1 Forward characteristics
0 0.2 0.3 0.4 0.50.1
1m
100m
10m
10
1
Ta =125
°C
Ta =75
°C
Ta =
25
°C
REVERSE CURRENT : I
R
(A)
REVERSE VOLTAGE : V
R
(V)
Fig.2 Reverse characteristics
020304010
1µ
10µ
1m
100µ
100m
10m
Ta =125°C
Ta =75°C
Ta =25°C
TERMINAL CAPACITANCE : C
T
(
pF)
REVERSE VOLTAGE : V
R
(V)
Fig.3 Capacitance between
terminals characteristics
0102030
100
1000
AVERAGE RECTIFIED FORWARD CURRENT : I
O
(A)
AMBIENT TEMPERATURE : Ta (°C)
Fig.4 Derating curve (I
O
- Ta)
(When mounted on
alumina PCBs)
5.0
4.0
3.0
2.0
1.0
0
0 25 50 75 100 125
sine
D=0.3
D=0.2
D=0.5
D=0.8
D=0.1
D=0.05
DC
Tp
T
D
=
Tp / T
V
R
=
V
RM
/ 2
I
F
I
O
AVERAGE RECTIFIED FORWARD CURRENT : I
O
(A)
LEAD TEMPERATURE : T
L
(°C)
Fig.5 Derating curve (I
O
- T
L
)
(When mounted on
alumina PCBs)
5.0
4.0
3.0
2.0
1.0
0
0 25 50 75 100 125
D=0.8
D=0.5
sine
D=0.3
D=0.2
D=0.1
D=0.05
DC
Tp
T
D
=
Tp / T
V
R=
V
RM
/ 2
I
O
I
F
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.4
0.2
0.6
0.8
1.0
1.2
1.4
FORWARD POWER DISSIPATION : P
F
(W)
AVERAGE RECTIFIED FORWARD CURRENT : I
O
(A)
D=0.05
D=0.1
D=0.2
D=0.3
D=0.5
D=0.8
DC
Tp
T
D
=
Tp / T
Tj
=
Tj Max.
I
F
I
O
sine
Fig.6 Forward power dissipation
characteristics
REVERSE POWER DISSIPATION : P
R
(
W)
REVERSE VOLTAGE : V
R
(
V)
Fig.7 Reverse power dissipation
characteristics
0
0 2 4 6 8 101214161820
0.05
0.10
0.15
0.20
0.30
0.25
D=0.8
sine
V
R
V
R
0
Tp
T
Tj
=
Tj Max.
Tj
=
Tj Max.
D
=
Tp / T
DC
D=0.05
D=0.1
D=0.2
D=0.3
D=0.5
AVERAGE RECTIFIED FORWARD CURRENT : I
O
(A)
AMBIENT TEMPERATURE : Ta (°C)
Fig.8 Derating curve (I
O
- Ta)
(when mounted on glass
epoxy PCBs)
5.0
4.0
3.0
2.0
1.0
0
0 25 50 75 100 125
D=0.8
D=0.5
sine
D=0.3
D=0.2
D=0.1
D=0.05
DC
Tp
T
D
=
Tp / T
V
R
=
V
RM
/ 2
I
F
I
O

RB063L-30TE25

Mfr. #:
Manufacturer:
Description:
Schottky Diodes & Rectifiers CHECK FOR PRODUCTION STATUS
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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