VS-16TTS08-M3

VS-16TTS..PbF Series, VS-16TTS..-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 28-Sep-17
1
Document Number: 94603
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Thyristor High Voltage, Phase Control SCR, 16 A
FEATURES
Designed and qualified according to
JEDEC
®
-JESD 47
125 °C max. operating junction temperature
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding, and battery
charge
DESCRIPTION
The VS-16TTS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operating up to
125 °C junction temperature.
Note
(1)
For higher voltage up to 1600 V contact factory
PRIMARY CHARACTERISTICS
I
T(AV)
10 A
V
DRM
/V
RRM
800 V, 1200 V
V
TM
1.4 V
I
GT
60 mA
T
J
-40 °C to 125 °C
Package TO-220AB
Circuit configuration Single SCR
(G) 3
2
(A)
1 (K)
TO-220AB
1
2
3
Available
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C,
common heatsink of 1 °C/W
13.5 17 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
Sinusoidal waveform 10
A
I
RMS
16
V
DRM
/V
RRM
Range
(1)
800/1200 V
I
TSM
200 A
V
T
10 A, T
J
= 25 °C 1.4 V
dV/dt 500 V/μs
dI/dt 150 A/μs
T
J
Range -40 to 125 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
I
RRM
/I
DRM
AT 125 °C
mA
VS-16TTS08PbF, VS-16TTS08-M3 800 800
10
VS-16TTS12PbF, VS-16TTS12-M3 1200 1200
VS-16TTS..PbF Series, VS-16TTS..-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 28-Sep-17
2
Document Number: 94603
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
TYP. MAX.
Maximum average on-state current I
T(AV)
T
C
= 98 °C, 180° conduction, half sine wave 10
A
Maximum RMS on-state current I
RMS
16
Maximum peak, one-cycle,
non-repetitive surge current
I
TSM
10 ms sine pulse, rated V
RRM
applied 170
10 ms sine pulse, no voltage reapplied 200
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 144
A
2
s
10 ms sine pulse, no voltage reapplied 200
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 2000 A
2
s
Maximum on-state voltage drop V
TM
10 A, T
J
= 25 °C 1.4 V
On-state slope resistance r
t
T
J
= 125 °C
24.0 m:
Threshold voltage V
T(TO)
1.1 V
Maximum reverse and direct leakage current I
RM
/I
DM
T
J
= 25 °C
V
R
= Rated V
RRM
/V
DRM
0.5
mA
T
J
= 125 °C 10
Holding current I
H
Anode supply = 6 V, resistive load, initial I
T
= 1 A
16TTS08PbF, 16TTS12PbF, T
J
= 25 °C
- 150
Maximum latching current I
L
Anode supply = 6 V, resistive load, T
J
= 25 °C 200
Maximum rate of rise of off-state voltage dV/dt T
J
= T
J
max., linear to 80 °C, V
DRM
= R
g
- k = Open 500 V/μs
Maximum rate of rise of turned-on current dI/dt 150 A/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
8.0
W
Maximum average gate power P
G(AV)
2.0
Maximum peak positive gate current + I
GM
1.5 A
Maximum peak negative gate voltage - V
GM
10 V
Maximum required DC gate current to trigger I
GT
Anode supply = 6 V, resistive load, T
J
= - 65 °C 90
mA
Anode supply = 6 V, resistive load, T
J
= 25 °C 60
Anode supply = 6 V, resistive load, T
J
= 125 °C 35
Maximum required DC gate
voltage to trigger
V
GT
Anode supply = 6 V, resistive load, T
J
= - 65 °C 3.0
V
Anode supply = 6 V, resistive load, T
J
= 25 °C 2.0
Anode supply = 6 V, resistive load, T
J
= 125 °C 1.0
Maximum DC gate voltage not to trigger V
GD
T
J
= 125 °C, V
DRM
= Rated value
0.25
Maximum DC gate current not to trigger I
GD
2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t
gt
T
J
= 25 °C 0.9
μsTypical reverse recovery time t
rr
T
J
= 125 °C
4
Typical turn-off time t
q
110
VS-16TTS..PbF Series, VS-16TTS..-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 28-Sep-17
3
Document Number: 94603
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-40 to 125 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 1.3
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
62
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.5
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB
16TTS08
16TTS12
90
95
100
105
110
115
120
125
024681012
30°
60°
90°
120°
180°
Conduction Angle
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
16TTS.. Series
R (DC) = 1.3 °C/ W
thJC
90
95
100
105
110
115
120
125
0246810121416
DC
30°
60°
90°
120°
180°
Maximum Allowable Case TemperatureC)
Conduction Period
Average On-state Current (A)
16TTS.. Series
R (DC) = 1.3 °C/ W
thJC
0
2
4
6
8
10
12
14
16
18
01234567891011
RM S Li m i t
180°
120°
90°
60°
30°
Conduction Angle
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
16TTS.. Se ries
T = 1 2 5 ° C
J
0
5
10
15
20
25
0 2 4 6 8 1012141618
DC
180°
120°
90°
60°
30°
RM S Li m it
Conduction Period
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
16TTS.. Series
T = 1 2 5 ° C
J

VS-16TTS08-M3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCRs 10A 800V Single SCR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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