OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-16TTS08PBF

P1-P3P4-P6P7-P7
VS-16TTS..PbF Series, VS-16TTS..-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 28-Sep-17
4
Document Number: 94603
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
80
100
120
140
160
180
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Loa d Condition And With
Ra ted V Applied Following Surge.
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM
J
Peak Half Sine Wave On-state Current (A)
16TTS..Series
80
100
120
140
160
180
200
0.01 0.1 1
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Pea k Ha lf Sine Wave Forw a rd Current (A)
Versus Pulse Tra in Dura tion.
Initial T = 125°C
No Volta ge Reap plied
Ra t e d V Re a p p l i e d
J
RRM
16TTS.. Series
1
10
100
1000
012345
T = 2 5 ° C
J
T = 125°C
J
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
16TTS.. Se rie s
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Squa re Wave Pulse Dura tion (s)
thJC
Steady State Value
(DC Operation)
16TTS.. Series
Si n g l e P u l se
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Transient Thermal Impedanc e Z (°C/ W)
VS-16TTS..PbF Series, VS-16TTS..-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 28-Sep-17
5
Document Number: 94603
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
Rectangular gate pulse
(4)
(3)
(2)
(1)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
T
J = 25 °C
TJ = 12 5 ° C
b)Recommended load line for
VGD
IGD
Frequency Limited by PG(AV)
a)Recommended load line for
ra ted d i/ d t : 10 V, 20 o hms
tr = 0.5 μs, tp >= 6 μs
<= 30% ra ted d i/ d t: 10 V, 65 ohms
tr = 1 μs, tp >= 6 μs
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
TJ = - 1 0 ° C
1 6 TTS. . Se r i e s
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-16TTS08PbF 50 1000 Antistatic plastic tubes
VS-16TTS08-M3 50 1000 Antistatic plastic tubes
VS-16TTS12PbF 50 1000 Antistatic plastic tubes
VS-16TTS12-M3 50 1000 Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95222
Part marking information
TO-220AB PbF www.vishay.com/doc?95225
TO-220AB -M3 www.vishay.com/doc?95028
2 - Current rating
3 - Circuit configuration:
4 - Package:
5
6
- Voltage code x 100 = V
RRM
T = Single thyristor
- Type of silicon:
T = TO-220AB
S = Converter grade
-
08 = 800 V
12 = 1200 V
7
Device code
62 43 5 7
16 T T S 12 PbF
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
VS-
1
1 - Vishay Semiconductors product
Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 08-Mar-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TO-220AB
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension and finish uncontrolled in L1
(3)
Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4)
Dimension b1, b3 and c1 apply to base metal only
(5)
Controlling dimensions: inches
(6)
Thermal pad contour optional within dimensions E, H1, D2 and
E1
(7)
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
(8)
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
SYMBOL
MILLIMETERS INCHES
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6
A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6
A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7
b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552
c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147
D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355 T 90° to 93° 90° to 93°
D2 11.68 12.88 0.460 0.507 6
P1-P3P4-P6P7-P7

VS-16TTS08PBF

Mfr. #:
Buy VS-16TTS08PBF
Manufacturer:
Vishay Semiconductors
Description:
SCRs RECOMMENDED ALT 844-16TTS08-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet