BAS116LT1G

© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 12
1 Publication Order Number:
BAS116LT1/D
BAS116L
Switching Diode
Features
Low Leakage Current Applications
Medium Speed Switching Times
Available in 8 mm Tape and Reel
Use BAS116LT1G to order the 7 inch/3,000 unit reel
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
75 Vdc
Peak Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3
CATHODE
1
ANODE
Device Package Shipping
ORDERING INFORMATION
SOT−23 (TO−236)
CASE 318
STYLE 8
MARKING DIAGRAM
1
2
3
JV M G
G
BAS116LT1G
SBAS116LT1G
SOT−23
(Pb−Free)
3000 / Tape & Ree
l
JV = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BAS116LT3G
NSVBAS116LT3G
SOT−23
(Pb−Free)
10000 / Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
www.onsemi.com
BAS116L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
BR
= 100 mAdc)
V
(BR)
75 Vdc
Reverse Voltage Leakage Current (V
R
= 75 Vdc)
Reverse Voltage Leakage Current (V
R
= 75 Vdc, T
J
= 150°C)
I
R
5.0
80
nAdc
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Forward Voltage (I
F
= 50 mAdc)
Forward Voltage (I
F
= 150 mAdc)
V
F
900
1000
1100
1250
mV
Diode Capacitance (V
R
= 0 V, f = 1.0 MHz) C
D
2.0 pF
Reverse Recovery Time (I
F
= I
R
= 10 mAdc) (Figure 1) t
rr
3.0
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
3. t
p
» t
rr
+10 V
2.0 k
820
W
0.1 mF
DUT
V
R
100 mH
0.1 mF
50 W Output
Pulse
Generator
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAS116L
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 2. Forward Voltage Figure 3. Leakage Current
V
F
, FORWARD VOLTAGE (V) V
R
, REVERSE VOLTAGE (V)
1.21.00.80.60.40.20
0.1
1
10
100
1,000
706050403020100
0.01
0.1
1.0
10
100
I
F
, FORWARD CURRENT (mA)
I
R
, REVERSE CURRENT (nA)
150°C
−55°C
25°C
80
T
A
= 150°C
Figure 4. Capacitance
V
R
, REVERSE VOLTAGE (V)
706050403020100
0
0.2
0.4
0.6
0.8
1.0
1.2
C
T
, TOTAL CAPACITANCE (pF)
80
T
A
= 25°C
−55°C
25°C

BAS116LT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 75V 200mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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