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Table 3. ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
500
nAdc
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
EBO
0.05
mAdc
Collector−Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50
Vdc
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= 5.0 mA, V
CE
= 10 V)
h
FE
80 150
Collector−Emitter Saturation Voltage (Note 3)
(I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(sat)
0.25
Vdc
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100 mA)
V
i(off)
1.2 0.5
Vdc
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 1.0 mA)
V
i(on)
3.0 1.6
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kW)
V
OL
0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9
Vdc
Input Resistor R1 70 100 130
kW
Resistor Ratio R
1
/R
2
0.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3
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TYPICAL CHARACTERISTICS
MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
403020 50100
0.01
0.1
10
100100.1
1
10
100
1000
Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage
V
R
, REVERSE VOLTAGE (V) V
in
, INPUT VOLTAGE (V)
50403020100
0
2
4
6
10
12
2016 2812840
0.1
1
10
100
Figure 6. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
4030 5020100
0.1
1
10
100
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
I
C
/I
B
= 10
150°C
−55°C
25°C
V
CE
= 10 V
150°C
−55°C
25°C
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
V
O
= 5 V
150°C
−55°C
25°C
V
O
= 0.2 V
150°C
−55°C
25°C
0.01
8
24
1
1
MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3
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PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
e
A1
b
A
E
D
2
3
1
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2.4
0.094
0.95
0.037
0.95
0.037
1.0
0.039
0.8
0.031
ǒ
mm
inches
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H
E
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.00 1.15 1.30 0.039
INCHES
A1 0.01 0.06 0.10 0.001
b 0.35 0.43 0.50 0.014
c 0.09 0.14 0.18 0.003
D 2.70 2.90 3.10 0.106
E 1.30 1.50 1.70 0.051
e 1.70 1.90 2.10 0.067
L 0.20 0.40 0.60 0.008
2.50 2.80 3.00 0.099
0.045 0.051
0.002 0.004
0.017 0.020
0.005 0.007
0.114 0.122
0.059 0.067
0.075 0.083
0.016 0.024
0.110 0.118
NOM MAX
H
E

MUN2136T1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SS SC59 BR XSTR PNP 50V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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