R8C/38T-A Group 4. Electrical Characteristics
R01DS0081EJ0100 Rev.1.00 Page 43 of 60
Dec 09, 2011
Notes:
1. Select the voltage detection level with bits VD1S0 to VD1S3 in the VD1LS register.
2. Time until the voltage monitor 1 interrupt request is generated after the voltage passes V
det1.
3. Necessary time until the voltage detection circuit operates when setting to 1 again after setting the VCA26 bit in the VCA2
register to 0.
Notes:
1. Time until the voltage monitor 2 interrupt request is generated after the voltage passes V
det2.
2. Necessary time until the voltage detection circuit operates when setting to 1 again after setting the VCA26 bit in the VCA2
register to 0.
Table 4.8 Voltage Detection 1 Circuit Characteristics
(Measurement conditions: Vcc = 1.8 V to 5.5 V, Topr = 20°C to 85°C (N version)/
40°C to 85°C (D version))
Symbol Parameter Conditions
Standard
Unit
Min. Typ. Max.
V
det1
Voltage detection level Vdet1_0
(1)
When Vcc falls 2.00 2.20 2.40 V
Voltage detection level Vdet1_1
(1)
When Vcc falls 2.15 2.35 2.55 V
Voltage detection level Vdet1_2
(1)
When Vcc falls 2.30 2.50 2.70 V
Voltage detection level Vdet1_3
(1)
When Vcc falls 2.45 2.65 2.85 V
Voltage detection level Vdet1_4
(1)
When Vcc falls 2.60 2.80 3.00 V
Voltage detection level Vdet1_5
(1)
When Vcc falls 2.75 2.95 3.15 V
Voltage detection level Vdet1_6
(1)
When Vcc falls 2.80 3.10 3.40 V
Voltage detection level Vdet1_7
(1)
When Vcc falls 2.95 3.25 3.55 V
Voltage detection level Vdet1_8
(1)
When Vcc falls 3.10 3.40 3.70 V
Voltage detection level Vdet1_9
(1)
When Vcc falls 3.25 3.55 3.85 V
Voltage detection level Vdet1_A
(1)
When Vcc falls 3.40 3.70 4.00 V
Voltage detection level Vdet1_B
(1)
When Vcc falls 3.55 3.85 4.15 V
Voltage detection level Vdet1_C
(1)
When Vcc falls 3.70 4.00 4.30 V
Voltage detection level Vdet1_D
(1)
When Vcc falls 3.85 4.15 4.45 V
Voltage detection level Vdet1_E
(1)
When Vcc falls 4.00 4.30 4.60 V
Voltage detection level Vdet1_F
(1)
When Vcc falls 4.15 4.45 4.75 V
Hysteresis width at the rising of Vcc in
voltage detection 1 circuit
Vdet1_0 to Vdet1_5
selected
0.07 V
Vdet1_6 to Vdet1_F
selected
0.10 V
Voltage detection 1 circuit response time
(2)
At the falling of Vcc from 5 V
to (Vdet1
0.1) V
60 150 μs
Voltage detection circuit self power
consumption
VCA26 = 1, Vcc = 5.0 V 1.7 ―μA
t
d(E-A) Waiting time until voltage detection circuit
operation starts
(3)
――100 μs
Table 4.9 Voltage Detection 2 Circuit Characteristics
(Measurement conditions: Vcc = 1.8 V to 5.5 V, Topr = 20°C to 85°C (N version)/
40°C to 85°C (D version))
Symbol Parameter Conditions
Standard
Unit
Min. Typ. Max.
V
det2 Voltage detection level Vdet2_0 When Vcc falls 3.70 4.00 4.30 V
Hysteresis width at the rising of Vcc in
voltage detection 2 circuit
0.1 ―μs
Voltage detection 2 circuit response time
(1)
At the falling of Vcc from 5 V
to (Vdet2_0
0.1) V
20 150 μs
Voltage detection circuit self power
consumption
VCA27 = 1, Vcc = 5.0 V 1.7 ―μA
t
d(E-A) Waiting time until voltage detection circuit
operation starts
(2)
――100 μs
R8C/38T-A Group 4. Electrical Characteristics
R01DS0081EJ0100 Rev.1.00 Page 44 of 60
Dec 09, 2011
Note:
1. To use the power-on reset function, enable voltage monitor 0 reset by setting the LVDAS bit in the OFS register to 0.
Figure 4.3 Power-on Reset Circuit Characteristics
Notes:
1. This enables the setting errors of bit rates such as 9600 bps and 38400 bps to be 0% when the serial interface is used in
UART mode.
2. This indicates the precision error for the oscillation frequency of the high-speed on-chip oscillator.
Table 4.10 Power-On Reset Circuit Characteristics
(1)
(Measurement conditions: Vcc = 1.8 V to 5.5 V, Topr = 20°C to 85°C (N version)/
40°C to 85°C (D version))
Symbol Parameter Conditions
Standard
Unit
Min. Typ. Max.
t
rth External power VCC rise gradient 0 50,000 mV/msec
Table 4.11 High-Speed On-Chip Oscillator Circuit Characteristics
Symbol Parameter Conditions
Standard
Unit
Min. Typ. Max.
High-speed on-chip oscillator frequency
after reset
Vcc = 1.8 V to 5.5 V,
20°C Topr 85°C
(N version)
40°C Topr 85°C
(D version)
40 MHz
High-speed on-chip oscillator frequency
when 01b or 10b is written to bits
FRA25 and FRA24 in the FRA2 register
(1)
36.864 MHz
High-speed on-chip oscillator frequency
when 10b is written to bits FRA25 and
FRA24 in the FRA2 register
—32—MHz
High-speed on-chip oscillator frequency
dependence on temperature and power
supply voltage
(2)
1.5 1.5 %
Oscillation stability time Vcc = 5.0 V, Topr = 25°C 250 ―μs
Self power consumption at oscillation Vcc = 5.0 V, Topr = 25°C 500 ―μA
R8C/38T-A Group 4. Electrical Characteristics
R01DS0081EJ0100 Rev.1.00 Page 45 of 60
Dec 09, 2011
Note:
1. Waiting time until the internal power supply generation circuit stabilizes during power-on.
Table 4.12 Low-Speed On-Chip Oscillator Circuit Characteristics
(Measurement conditions: Vcc = 1.8 V to 5.5 V, Topr = 20°C to 85°C (N version)/
40°C to 85°C (D version))
Symbol Parameter Conditions
Standard
Unit
Min. Typ. Max.
fLOCO Low-speed on-chip oscillator frequency 60 125 250 kHz
Oscillation stability time Vcc = 5.0 V, Topr = 25°C 30 100 μs
Self power consumption at oscillation Vcc = 5.0 V, Topr = 25°C 3 ―μA
Table 4.13 Power Supply Circuit Characteristics
(Measurement conditions: Vcc = 1.8 V to 5.5 V, Topr = 20°C to 85°C (N version)/
40°C to 85°C (D version))
Symbol Parameter Conditions
Standard
Unit
Min. Typ. Max.
t
d(P-R) Time for internal power supply
stabilization during power-on
(1)
――2,000 μs

R5F21388SNFP#30

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
16-bit Microcontrollers - MCU R8C/36T-A 64K+4K/6K 80LQFP 12x12
Lifecycle:
New from this manufacturer.
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