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TISP4260F3LMR

P1-P3P4-P6P7-P8
TISP4072F3LM THRU TISP4082F3LM,
TISP4125F3LM THRU TISP4180F3LM,
TISP4240F3LM THRU TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxF3LM Overvoltage Protector Series
NOVEMBER 1997 - REVISED JANUARY 2010
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
LM Package (Top View)
*RoHS COMPLIANT
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes
Device Symbol
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
fl ash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping un-
til the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes
the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup
as the diverted current subsides.
How to Order
Device
V
DRM
V
V
(BO)
V
‘4072 58 72
‘4082 66 82
‘4125 100 125
‘4150 120 150
‘4180 145 180
‘4240 180 240
‘4260 200 260
‘4290 220 290
‘4320 240 320
‘4380 270 380
Waveshape Standard
I
TSP
A
10/160 μs FCC Part 68 60
0.5/700 μs I3124 38
10/700 μs ITU-T K.20/21 50
10/560 μs FCC Part 68 45
10/1000 μs REA PE-60 35
................................................UL Recognized Component
NC - No internal connection on pin 2
NC
T(A)
R(B)
MD4XAT
1
2
3
LMF Package (LM Package with Formed Leads) (Top View)
NC - No internal connection on pin 2
NC
T(A)
R(B)
MD4XAKB
1
2
3
T
R
SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
Device Package Carrier
TISP4xxxF3LM
Straight Lead DO-92 (LM)
Bulk Pack
Tape and Reeled
Formed Lead DO-92 (LMF) Tape and Reeled
TISP4xxxF3LM-S
TISP4xxxF3LMR-S
TISP4xxxF3LMFR-S
Insert xxx value corresponding to protection voltages of 072, 082, 125 etc.
Order As
OBSOLETE
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
TISP4xxxF3LM Overvoltage Protector Series
Description (Continued)
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
This TISP4xxxF3LM range consists of ten voltage variants to meet various maximum system voltage levels (58 V to 270 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied
in a DO-92 (LM) cylindrical plastic package. The TISP4xxxF3LM is a straight lead DO-92 supplied in bulk pack and on tape and reeled. The
TISP4xxxF3LMF is a formed lead DO-92 supplied only on tape and reeled.
Rating Symbol Value Unit
Repetitive peak off-state voltage (0 °C < T
J
< 70 °C)
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
V
DRM
± 58
± 66
± 100
± 120
± 145
± 180
± 200
± 220
± 240
± 270
V
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
I
TSP
A
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) excluding ‘4072 - ‘4082 175
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) excluding ‘4072 - ‘4082 120
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 60
5/200 µs (VDE 0433, 2 kV, 10/700 µs voltage wave shape) 50
0.2/310 µs (I3124, 1.5 kV, 0.5/700 µs voltage wave shape) 38
5/310 µs (ITU-T K.20/21, 1.5 kV, 10/700 µs voltage wave shape) 38
5/310 µs (FTZ R12, 2 kV, 10/700 µs voltage wave shape) 50
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 45
10/1000 µs (REA PE-60, 10/1000 µs voltage wave shape) 35
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) ‘4072 - ‘4082 only 80
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) ‘4072 - ‘4082 only 70
Non-repetitive peak on-state current (see Notes 2 and 3)
I
TSM
4A
50/60 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A di
T
/dt 250 A/µs
Junction temperature T
J
-40 to +150 °C
Storage temperature range T
stg
-55 to +150 °C
NOTES: 1. Initially the TISP must be in thermal equilibrium with 0 °C<T
J
<70°C.
2. The surge may be repeated after the TISP returns to its initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
OBSOLETE
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
TISP4xxxF3LM Overvoltage Protector Series
Electrical Characteristics, T
A
= 25 °C (Unless Otherwise Noted)
Thermal Characteristics
Parameter Test Conditions Min Typ Max Unit
R
ΘJA
Junction to free air thermal resistance
EIA/JESD51-3 PCB mounted in an EIA/
JESD51-2 enclosure
120 °C/W
Parameter Test Conditions Min Typ Max Unit
I
DRM
Repetitive peak off-
state current
V
D
= ±V
DRM
, 0 °C < T
J
< 70 °C ±10 A
V
(BO)
Breakover voltage dv/dt = ±250 V/ms, R
SOURCE
= 300
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
±72
±82
±125
±150
±180
±240
±260
±290
±320
±380
V
V
(BO)
Impulse breakover
voltage
dv/dt = ±1000 R
SOURCE
= 50
di/dt < 20 A/μs
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
±86
±96
±143
±168
±198
±267
±287
±317
±347
±407
V
I
(BO)
Breakover current dv/dt = ±250 V/ms, R
SOURCE
= 300 ±0.15 ±0.6 A
V
T
On-state voltage I
T
= ±5A, t
W
= 100 μs ±3V
I
H
Holding current I
T
= ±5A, di/dt=-/+30mA/ms ±0.15 A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
±5kV
I
D
Off-state current V
D
= ±50 V ±10 A
C
off
Off-state capacitance
f = 100 kHz, V
d
=1V r.m.s., V
D
=0,
f = 100 kHz, V
d
=1V r.m.s., V
D
=-50V
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
63
43
44
25
15
11
108
74
74
40
25
20
pF
OBSOLETE
P1-P3P4-P6P7-P8

TISP4260F3LMR

Mfr. #:
Buy TISP4260F3LMR
Manufacturer:
Bourns
Description:
Thyristor Surge Protection Devices (TSPD)
Lifecycle:
New from this manufacturer.
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