Characteristics STPS20120C
2/10 Doc ID 11212 Rev 3
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
T
j
(diode 1) = P(diode 1) x R
th(j-c)
(per diode) + P(diode 2) x R
th(c)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 120 V
I
F(RMS)
RMS forward current 30 A
I
F(AV)
Average forward current, δ = 0.5
TO-220AB, I
2
PAK,
TO-220AB narrow
leads
T
c
= 150 °C
Per diode
Per device
10
A
T
c
= 145 °C 20
TO-220FPAB
T
c
= 125 °C
Per diode
Per device
10
T
c
= 100 °C 20
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 150 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 4600 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
175 °C
1. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
I
2
PAK, TO-220AB,
TO-220AB narrow leads
Per diode
Tot al
3
1.8
°C/W
TO-220FPAB
Per diode
Tot al
5.5
4.5
R
th(c)
Coupling
I
2
PAK, TO-220AB
TO-220AB narrow leads
Tot al
0.6
TO-220FPAB 3.5
dPtot
dTj
---------------
1
Rth j a–()
--------------------------
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