MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CL1A060
FLAT-BASE TYPE
INSULATED PACKAGE
May 2009
3
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Condition
V
CC(surge)
Tstg
Viso
Ratings
V
CC(PROT)
400
500
–40 ~ +125
2500
Unit
V
°C
V
rms
V
V
D = 13.5 ~ 16.5V
Inverter Part, T
j = +125°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
TOTAL SYSTEM
0.37
0.63
0.038
°C/W
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Inverter IGBT part (per 1 element) (Note-1)
Inverter FWDi part (per 1 element) (Note-1)
Case to fin, (per 1 module)
Thermal grease applied (Note-1)
Symbol
Condition
Unit
Min.
—
—
—
—
—
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
(Note-1) Tc (under the chip) measurement point is below.
Parameter
Limits
Typ. Max.
UP
IGBT
27.9
–6.2
VP WP UN VN WN
FWDi
27.9
0.2
IGBT
66.2
–6.2
FWDi
66.2
0.2
IGBT
85.8
–6.2
FWDi
85.8
0.2
IGBT
37.4
5.4
FWDi
37.4
–0.8
IGBT
56.1
5.4
FWDi
56.1
–0.8
IGBT
74.7
5.4
FWDi
74.7
–0.8
arm
axis
X
Y
(unit : mm)
2.35
2.35
2.8
2.0
0.8
1.0
2.3
1.0
1
10
Min. Typ. Max.
Collector-Emitter Saturation
Voltage
Collector-Emitter Cutoff
Current
–I
C = 75A, VD = 15V, VCIN = 15V (Fig. 2)
T
j = 25°C
T
j = 125°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
V
CE(sat)
ICES
VEC
ton
trr
tc(on)
toff
tc(off)
Limits
—
—
—
0.3
—
—
—
—
—
—
1.75
1.75
1.7
0.8
0.4
0.4
1.0
0.3
—
—
T
j = 25°C
T
j = 125°C
FWDi Forward Voltage
Switching Time
V
D = 15V, VCIN = 0V↔15V
V
CC = 300V, IC = 75A
T
j = 125°C
Inductive Load (Fig. 3,4)
V
CE
= V
CES
, V
D
= 15V
(Fig. 5)
V
D = 15V, IC = 75A
V
CIN = 0V, Pulsed (Fig. 1)
V
mA
V
µs
Unit
Bottom view
* If you use this value, Rth(f-a) should be measured just under the chips.
