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BZT52-B18J

P1-P3P4-P6P7-P9P10-P11
Nexperia
BZT52-B series
Single Zener diodes in a SOD123 package
BZT52-B_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 20 December 2017
4 / 11
Table 8. Characteristics per type; BZT52-B2V4 to BZT52-B24
T
j
= 25 °C unless otherwise specified.
Working
voltage
V
Z
(V);
Maximum
differential
resistance
r
dif
(Ω)
Temperature
coefficient
S
Z
(mV/K);
I
Z
= 5 mA I
Z
= 1 mA I
Z
= 5 mA
Reverse
current
I
R
(μA)
I
Z
= 5 mA
Diode
capacitance
C
d
(pF)
[1]
Non-
repetitive
peak reverse
current
I
ZSM
(A)
[2]
BZT52
-xxx
Sel
Min Max Max Max Max V
R
(V) Min Max Max Max
2V4 B 2.35 2.45 400 85 50 1 −3.5 0.0 450 6.00
2V7
B 2.65 2.75 500 83 20 1 −3.5 0.0 450 6.00
3V0
B 2.94 3.06 500 95 10 1 −3.5 0.0 450 6.00
3V3
B 3.23 3.37 500 95 5 1 −3.5 0.0 450 6.00
3V6
B 3.53 3.67 500 95 5 1 −3.5 0.0 450 6.00
3V9
B 3.82 3.98 500 95 3 1 −3.5 0.0 450 6.00
4V3
B 4.21 4.39 500 95 3 1 −3.5 0.0 450 6.00
4V7
B 4.61 4.79 500 78 3 2 −3.5 0.2 300 6.00
5V1
B 5.00 5.20 480 60 2 2 −2.7 1.2 300 6.00
5V6
B 5.49 5.71 400 40 1 2 −2.0 2.5 300 6.00
6V2
B 6.08 6.32 150 10 3 4 0.4 3.7 200 6.00
6V8
B 6.66 6.94 80 8 2 4 1.2 4.5 200 6.00
7V5
B 7.35 7.65 80 10 1 5 2.5 5.3 150 4.00
8V2
B 8.04 8.36 80 10 0.7 5 3.2 6.2 150 4.00
9V1
B 8.92 9.28 100 10 0.5 6 3.8 7.0 150 3.00
10
B 9.80 10.20 70 10 0.2 7 4.5 8.0 90 3.00
11
B 10.80 11.20 70 10 0.1 8 5.4 9.0 85 2.50
12
B 11.80 12.20 90 10 0.1 8 6.0 10.0 85 2.50
13
B 12.70 13.30 110 10 0.1 8 7.0 11.0 80 2.50
15
B 14.70 15.30 110 15 0.05 10.5 9.2 13.0 75 2.00
16
B 15.70 16.30 170 20 0.05 11.2 10.4 14.0 75 1.50
18
B 17.60 18.40 170 20 0.05 12.6 12.4 16.0 70 1.50
20
B 19.60 20.40 220 20 0.05 14 14.4 18.0 60 1.50
22
B 21.60 22.40 220 25 0.05 15.4 16.4 20.0 60 1.25
24
B 23.50 24.50 220 30 0.05 16.8 18.4 22.0 55 1.25
[1] f = 1 MHz; V
R
= 0 V
[2] t
p
= 100 μs; T
amb
= 25 °C
Nexperia
BZT52-B series
Single Zener diodes in a SOD123 package
BZT52-B_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 20 December 2017
5 / 11
Table 9. Characteristics per type; BZT52-B27 to BZT52-B51
T
j
= 25 °C unless otherwise specified.
Working
voltage
V
Z
(V);
Maximum
differential
resistance
r
dif
(Ω)
Temperature
coefficient
S
Z
(mV/K);
I
Z
= 2 mA I
Z
= 1 mA I
Z
= 5 mA
Reverse
current
I
R
(μA)
I
Z
= 5 mA
Diode
capacitance
C
d
(pF)
[1]
Non-
repetitive
peak reverse
current
I
ZSM
(A)
[2]
BZT52
-xxx
Sel
Min Max Max Max Max V
R
(V) Min Max Max Max
27 B 26.5 27.5 250 40 0.05 18.9 21.4 25.3 50 1.0
30 B 29.4 30.6 250 40 0.05 21.0 24.4 29.4 50 1.0
33 B 32.3 33.7 250 40 0.05 23.1 27.4 33.4 45 0.9
36 B 35.3 36.7 250 60 0.05 25.2 30.4 37.4 45 0.8
39 B 38.2 39.8 300 75 0.05 27.3 33.4 41.2 45 0.7
43 B 42.1 43.9 325 80 0.05 30.1 37.6 46.6 40 0.6
47 B 46.1 47.9 325 90 0.05 32.9 42.0 51.8 40 0.5
51 B 50.0 52.0 350 100 0.05 35.7 46.6 57.2 40 0.4
[1] f = 1 MHz; V
R
= 0 V
[2] t
p
= 100 μs; T
amb
= 25 °C
Table 10. Characteristics per type; BZT52-B56 to BZT52-B75
T
j
= 25 °C unless otherwise specified.
Working
voltage
V
Z
(V);
Maximum
differential
resistance
r
dif
(Ω)
Reverse
current
I
R
(μA)
Temperature
coefficient
S
Z
(mV/K);
I
Z
= 2 mA I
Z
= 0.5
mA
I
Z
= 2 mA I
Z
= 5 mA
Diode
capacitance
C
d
(pF)
[1]
Non-
repetitive
peak reverse
current
I
ZSM
(A)
[2]
BZT52
-xxx
Sel
Min Max Max Max Max V
R
(V) Min Max Max Max
56 B 54.9 57.1 375 120 0.05 39.2 52.2 63.8 40 0.30
62 B 60.8 63.2 400 140 0.05 43.4 58.8 71.6 35 0.30
68 B 66.6 69.4 400 160 0.05 47.6 65.6 79.8 35 0.25
75 B 73.5 76.5 400 175 0.05 52.5 73.4 88.6 35 0.20
[1] f = 1 MHz; V
R
= 0 V
[2] t
p
= 100 μs; T
amb
= 25 °C
Nexperia
BZT52-B series
Single Zener diodes in a SOD123 package
BZT52-B_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 20 December 2017
6 / 11
mbg801
10
3
1
t
p
(ms)
P
ZSM
(W)
10
10
2
10
- 1
10
1
(1)
(2)
(1) T
j
= 25 °C (prior to surge)
(2) T
j
= 150 °C (prior to surge)
Figure 1. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum values
V
F
(V)
0.6 10.8
mbg781
100
200
300
I
F
(mA)
0
T
j
= 25 °C
Figure 2. Forward current as a function of forward
voltage; typical values
0 60
0
- 2
- 3
- 1
mbg783
20 40
I
Z
(mA)
S
Z
(mV/K)
4V3
3V9
3V6
3V0
2V4
2V7
3V3
BZT52-B2V4 to BZT52-B4V3
T
j
= 25 °C to 150 °C
Figure 3. Temperature coefficient as a function of
working current; typical values
0 2016
10
0
- 5
5
mbg782
4 8 12
I
Z
(mA)
S
Z
(mV/K)
4V7
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
BZT52-B4V7 to BZT52-B12
T
j
= 25 °C to 150 °C
Figure 4. Temperature coefficient as a function of
working current; typical values
8 Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
P1-P3P4-P6P7-P9P10-P11

BZT52-B18J

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Manufacturer:
Nexperia
Description:
Zener Diodes BZT52-B18/SOD123/SOD2
Lifecycle:
New from this manufacturer.
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