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BAV101-GS08

P1-P3P4-P4
BAV100, BAV101, BAV102, BAV103
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 31-Jul-12
1
Document Number: 85542
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diodes, High Voltage
MECHANICAL DATA
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• Silicon epitaxial planar diode
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• General purposes
PARTS TABLE
PART
TYPE
DIFFERENTIATION
ORDERING CODE
TYPE
MARKING
INTERNAL CONSTRUCTION REMARKS
BAV100 V
RRM
= 60 V BAV100-GS18 or BAV100-GS08 - Single diode Tape and reel
BAV101 V
RRM
= 120 V BAV101-GS18 or BAV101-GS08 - Single diode Tape and reel
BAV102 V
RRM
= 200 V BAV102-GS18 or BAV102-GS08 - Single diode Tape and reel
BAV103 V
RRM
= 250 V BAV103-GS18 or BAV103-GS08 - Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Repetitive peak reverse voltage
BAV100 V
RRM
60 V
BAV101 V
RRM
120 V
BAV102 V
RRM
200 V
BAV103 V
RRM
250 V
Reverse voltage
BAV100 V
R
50 V
BAV101 V
R
100 V
BAV102 V
R
150 V
BAV103 V
R
200 V
Peak forward surge current t
p
= 1 s I
FSM
1A
Repetitive peak forward current I
FRM
625 mA
Forward continuous current I
F
250 mA
Power dissipation P
tot
500 mW
BAV100, BAV101, BAV102, BAV103
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 31-Jul-12
2
Document Number: 85542
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to lead R
thJL
350 K/W
Thermal resistance junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
R
thJA
500 K/W
Junction temperature T
j
175 °C
Storage temperature range T
stg
- 65 to + 175 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 100 mA V
F
1V
Reverse current
V
R
= 50 V BAV100 I
R
100 nA
V
R
= 100 V BAV101 I
R
100 nA
V
R
= 150 V BAV102 I
R
100 nA
V
R
= 200 V BAV103 I
R
100 nA
T
j
= 100 °C, V
R
= 50 V BAV100 I
R
15 μA
T
j
= 100 °C, V
R
= 100 V BAV101 I
R
15 μA
T
j
= 100 °C, V
R
= 150 V BAV102 I
R
15 μA
T
j
= 100 °C, V
R
= 200 V BAV103 I
R
15 μA
Breakdown voltage
I
R
= 100 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
BAV100 V
(BR)
60 V
I
R
= 100 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
BAV101 V
(BR)
120 V
I
R
= 100 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
BAV102 V
(BR)
200 V
BAV103 V
(BR)
250 V
Diode capacitance
V
R
= 0 V, f = 1 MHz,
V
HF
= 50 mV
C
D
1.5 pF
Differential forward current I
F
= 10 mA r
f
5
Reverse recovery time
I
F
= I
R
= 30 mA,
i
R
= 3 mA, R
L
= 100
t
rr
50 ns
0 40 80 120 160
0.01
0.1
1
10
1000
I-Reverse Current (µA)
R
T
j
-Junction Temperature (°C)
200
94 9084
100
Scattering Limit
V
R
= V
RRM
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I-Forward Current (mA)
F
V
F
-Forward Voltage (V)
2.0
94 9085
Scattering Limit
T
j
= 25 °C
BAV100, BAV101, BAV102, BAV103
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 31-Jul-12
3
Document Number: 85542
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Differential Forward Resistance vs. Forward Current
PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80
0.1 1 10
1
10
100
1000
r - Differential Forward Resistance ( )
f
I
F
- Forward Current (mA)
100
94 9089
Ω
T
j
= 25 °C
Cathode indentification
0.47 (0.019) max.
2.5 (0.098) max.
1.25 (0.49) min.
3.7 (0.146)
3.3 (0.130)
5 (0.197) ref.
2 (0.079) min.
1.6 (0.063)
1.4 (0.055)
Foot print recommendation:
*
* The gap between plug and glass can
be either on cathode or anode side
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
P1-P3P4-P4

BAV101-GS08

Mfr. #:
Buy BAV101-GS08
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching 1.0 Amp 120V 500mW
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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