V
RRM
= 100 V - 1000 V
I
F
= 40 A
Features
• High Surge Capability DO-5 Package
• Types up to 1000 V V
RRM
Parameter Symbol FR40B(R)05 FR40D(R)05 FR40G(R)05 Unit
Re
etitive
eak reverse
FR40J(R)05
FR40B05 thru FR40JR05
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
Silicon Fast
Recover
Diode
voltage
RRM
RMS reverse voltage
V
RMS
70 140 280 V
DC blocking voltage
V
DC
100 200 400 V
Continuous forward current
I
F
40 40 40 A
Operating temperature
T
j
-40 to 125 -40 to 125 -40 to 125 °C
Storage temperature
T
stg
-40 to 150 -40 to 150 -40 to 150 °C
Parameter Symbol FR40B(R)05 FR40D(R)05 FR40G(R)05 Unit
Diode forward voltage 1.4 1.4 1.4
25 25 25 μA
10 10 10 mA
Recovery Time
Maximum reverse recovery
time
T
RR
500 500 500 nS
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
0.8 0.8 0.8 °C/W
1.4
420
600
40
500
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
R
= 100 V, T
j
= 125 °
V
25
10
500
0.8
A500
-40 to 125
-40 to 150
FR40J(R)05
V
R
= 100 V, T
j
= 25 °C
I
F
= 40 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
500 500
T
C
= 25 °C, t
p
= 8.3 ms
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
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