MRF5S19150HR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
2020
5
15
1900
−55
40
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2- Carrier N -CDMA Broadband Performance
@ P
out
= 32 Watts Avg.
G
ps
, POWER GAIN (dB)
−60
−10
−20
−30
−40
INPUT RETURN LOSS (dB)IRL,
V
DD
= 28 Vdc, P
out
= 32 W (Avg.), I
DQ
= 1400 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.228 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
IM3 (dBc), ACPR (dBc)
−50
14 35
13 30
12 25
11 20
10 −30
9 −35
8 −40
7 −45
6 −50
1920 1940 1960 1980 2000
100
11
16
1
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two- Tone Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
10
15
14
13
12
I
DQ
= 2100 mA
1700 mA
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
1400 mA
700 mA
1050 mA
100
−55
−15
1
I
DQ
= 2100 mA
1700 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation versus
Output Power
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
10
1400 mA
700 mA
1050 mA
−20
−25
−30
−35
−40
−45
−50
10
−60
−20
0.1
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULATION DISTORTION (dBc)IMD,
3rd Order
V
DD
= 28 Vdc, P
out
= 150 W (PEP), I
DQ
= 1400 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
5th Order
7th Order
−25
−30
−35
−40
−45
−50
−55
1
45
49
59
35
P3dB = 53.71 dBm (234.96 W)
P
in
, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P
out
, OUTPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 1400 mA
Pulsed CW, 8 µsec (on), 1 msec (off)
f = 1960 MHz
444342414039383736
58
57
56
55
54
53
52
51
50
P1dB = 53.01 dBm (199.99 W)
η
D
, DRAIN
EFFICIENCY (%)
η
D
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
