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T2851N42TOHXPSA1

P1-P3P4-P6P7-P9P10-P11
Netz-Thyristor
Phase Control Thyristor
Technische Information /
technical information
T2851N
Date of Publication: 2017-03-17
Revision: 9.2
Seite/page: 1/11
enndaten
V
DRM
/ V
RRM
5200 V
I
TAVM
2980 A (T
C
=85°C)
3570A (T
C
=55°C)
I
TSM
82000 A
V
T0
0,765 V
r
T
0,234 mΩ
R
thJC
5,0 K/kW
Clamping Force
63 … 91 kN
Max. Diameter
151,5 mm
Contact Diameter
100 mm
Height
35 mm
For type designation please refer to actual shortform
catalog
http://www.ifbip.com/catalog
Features
Full blocking 50/60Hz over a wide range temperature
range
High DC blocking stability
High surge current capability
High case non-rupture current
High di/dt capability
Typical Applications
Static Var Compensation SVC
High Current Rectifier
Rectifier for Drives Applications
Medium Voltage Drives
Load Commutating Inverter
content of customer DMX code
DMX code
DMX code
digit
digit quantity
serial number
1..7
7
SP material number
8..16
9
datecode (production day)
17..18
2
datecode (production year)
19..20
2
datecode (production month)
21..22
2
vT class (optional)
23..26
4
QR class (optional)
27..30
4
www.ifbip.com
support@infineon-bip.com
1
2
4
5
Netz-Thyristor
Phase Control Thyristor
Technische Information /
technical information
T2851N
Date of Publication: 2017-03-17
Revision: 9.2
Seite/page: 2/11
Elektrische Eigenschaften
Elektrische Eigenschaften / electrical properties
Höchstzulässige Werte / maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltage
T
vj
= -40°C... T
vj max
V
DRM
,V
RRM
4200
4800
5000
5200
V
V
V
V
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
T
C
= 85 °C
I
TRMSM
4680
A
Dauergrenzstrom
average on-state current
T
C
= 85 °C
T
C
= 70 °C
T
C
= 55 °C
I
TAVM
2980
3590
4120
A
A
A
Stoßstrom-Grenzwert
surge current
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
TSM
82000
79000
A
A
Grenzlastintegral
I²t-value
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I²t
33500
31000
10³ A²s
10³ A²s
Kritische Stromsteilheit
critical rate of rise of on-state current
DIN IEC 60747-6
f = 50 Hz, i
GM
= 3 A, di
G
/dt = 6 A/µs
(di
T
/dt)
cr
300
A/µs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
5.Kennbuchstabe / 5
th
letter H
(dv
D
/dt)
cr
2000
V/µs
Charakteristische Werte / characteristic values
Durchlaßspannung
on-state voltage
T
vj
= T
vj max
, i
T
= 4000A
v
T
typ.
Max.
1,61
1,7
V
V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(TO)
typ.
max.
0,728
0,765
V
V
Ersatzwiderstand
slope resistance
T
vj
= T
vj max
r
T
typ.
Max.
0,22
0,234
mΩ
mΩ
Durchlaßkennlinie 400A i
F
5000A
on-state characteristic
T
vj
= T
vj max
typ.
A
-0,2562
B
0,000158
C
0,17664
D
-0,0037
max.
A
-1,91423
B
0,00041
C
0,57615
D
-0,04425
Zündstrom
gate trigger current
T
vj
= 25°C, v
D
= 12 V
I
GT
max.
350
mA
Zündspannung
gate trigger voltage
T
vj
= 25°C, v
D
= 12 V
V
GT
max.
2,5
V
Nicht zündender Steuerstrom
gate non-trigger current
T
vj
= T
vj max
, v
D
= 12 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
I
GD
max.
max.
20
10
mA
mA
Nicht zündende Steuerspannung
gate non-trigger voltage
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
V
GD
max.
0,4
V
Haltestrom
holding current
T
vj
= 25°C, v
D
= 12 V
I
H
max.
350
mA
Einraststrom
latching current
T
vj
= 25°C, v
D
= 12 V, R
GK
≥ 10 Ω
i
GM
= 3 A, di
G
/dt = 6 A/µs, t
g
= 20 µs
I
L
max.
3
A
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
i
D
, i
R
max.
600
mA
Zündverzug
gate controlled delay time
DIN IEC 60747-6
T
vj
= 25 °C,i
GM
= 3 A, di
G
/dt = 6 A/µs
t
gd
max.
2
µs
prepared by:
TM
date of publication:
2017-03-17
approved by:
JP
revision:
9.2
T
TTT
iD)1i(LnCiBAv
Netz-Thyristor
Phase Control Thyristor
Technische Information /
technical information
T2851N
Date of Publication: 2017-03-17
Revision: 9.2
Seite/page: 3/11
Thermische Eigenschaften
Mechanische Eigenschaften
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
Freiwerdezeit
circuit commutated turn-off time
T
vj
= T
vj max
, i
TM
= I
TAVM
v
RM
= 100 V, v
DM
= 0,67 V
DRM
dv
D
/dt = 20 V/µs, -di
T
/dt = 10 A/µs
4.Kennbuchstabe / 4
th
letter O
t
q
typ.
600
µs
Sperrverzögerungsladung
recovered charge
T
vj
= T
vj max
i
TM
= I
TAVM
, -di
T
/dt = 10 A/µs
V
R
= 0,5V
RRM
, V
RM
= 0,8V
RRM
Q
r
max.
20
mAs
Rückstromspitze
peak reverse recovery current
T
vj
= T
vj max
i
TM
= I
TAVM
, -di
T
/dt = 10 A/µs
V
R
= 0,5V
RRM
, V
RM
= 0,8V
RRM
I
RM
max.
400
A
Thermische Eigenschaften / thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Kühlfläche / cooling surface
beidseitig / two-sided, θ = 180°sin
beidseitig / two-sided, DC
Anode / anode, DC
Kathode / cathode, DC
R
thJC
max.
max.
max.
max.
5,4
5,0
9,0
11,2
K/kW
K/kW
K/kW
K/kW
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Kühlfläche / cooling surface
beidseitig / two-sided
einseitig / single-sided
R
thCH
max.
max.
1,5
3,0
K/kW
K/kW
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
T
vj max
125
°C
Betriebstemperatur
operating temperature
T
c op
-40...+125
°C
Lagertemperatur
storage temperature
T
stg
-40...+150
°C
Mechanische Eigenschaften / mechanical properties
Gehäuse, siehe Anlage
case, see annex
Seite 4
page 4
Si-Element mit Druckkontakt
Si-pellet with pressure contact
Anpresskraft
clamping force
F
63...91
kN
Steueranschlüsse
control terminals
DIN 46244 Gate
Kathode /Cathode
A 4,8x0,8
A 6,3x0,8
Gewicht
weight
G
typ.
3000
g
Kriechstrecke
creepage distance
49
mm
Schwingfestigkeit
vibration resistance
f = 50 Hz
50
m/s²
P1-P3P4-P6P7-P9P10-P11

T2851N42TOHXPSA1

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Buy T2851N42TOHXPSA1
Manufacturer:
Infineon Technologies
Description:
SCR MODULE 5200V 4860A DO200AE
Lifecycle:
New from this manufacturer.
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