Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
Table 8: Absolute Maximum Ratings
Symbol Parameter Min Max Units
V
DD
V
DD
supply voltage relative to V
SS
–0.4 1.975 V
V
IN
, V
OUT
Voltage on any pin relative to V
SS
–0.4 1.975 V
Table 9: Operating Conditions
Symbol Parameter Min Nom Max Units Notes
V
DD
V
DD
supply voltage 1.425 1.5 1.575 V
I
VTT
Termination reference current from V
TT
–600
600 mA
V
TT
Termination reference voltage (DC) –
command/address bus
0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V 1
Ii Input leakage current;
Any input 0V V
IN
V
DD
; V
REF
input 0V V
IN
0.95V (All other pins
not under test = 0V)
Address in-
puts, RAS#,
CAS#, WE#,
S#, CKE, ODT,
BA, CK, CK#
TBD TBD TBD µA
DM –4 0 4
Ioz Output leakage current;
0V V
OUT
V
DD
;
DQ and ODT are
disabled; ODT is HIGH
DQ, DQS,
DQS#
–10 0 10 µA
Ivref V
REF
supply leakage current;
V
REFDQ
= V
DD
/2 or V
REFCA
= V
DD
/2
(All other pins not under test = 0V)
–36 0 36 µA
T
A
Module ambient
operating temperature
Commercial 0
70 °C 2, 3
Industrial –40
85 °C
T
C
DDR3 SDRAM compo-
nent case operating
temperature
Commercial 0
95 °C 2, 3, 4
Industrial –40
95 °C
Notes:
1. V
TT
termination voltage in excess of the stated limit will adversely affect the command
and address signals’ voltage margin and will reduce timing margins.
2. T
A
and T
C
are simultaneous requirements.
3. For further information, refer to technical note TN-00-08: “Thermal Applications,”
available on Micron’s Web site.
4.
The refresh rate is required to double when 85°C < T
C
95°C.
4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 SDRAM RDIMM
Electrical Specifications
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jdzs36c512_1gx72pz.pdf - Rev. C 3/11 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's mem-
ory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 SDRAM RDIMM
DRAM Operating Conditions
PDF: 09005aef83a71a6a
jdzs36c512_1gx72pz.pdf - Rev. C 3/11 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 11: DDR3 I
CDD
Specifications and Conditions – 4GB
Values are for the MT41J512M4 DDR3 SDRAM only and are computed from values specified in the 2Gb TwinDie (512 Meg
x 4) component data sheet
Parameter
Combined
Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-
to-PRECHARGE
I
CDD0
2016 1836 1656 mA
Operating current 1: One bank ACTIVATE-
to-READ-to-PRECHARGE
I
CDD1
2376 2196 2016 mA
Precharge power-down current: Slow exit I
CDD2P
432 432 432 mA
Precharge power-down current: Fast exit I
CDD2P
1026 936 846 mA
Precharge quiet standby current I
CDD2Q
1422 1296 1170 mA
Precharge standby current I
CDD2N
1476 1386 1206 mA
Precharge standby ODT current I
CDD2NT
1926 1746 1566 mA
Active power-down current I
CDD3P
1026 936 846 mA
Active standby current I
CDD3N
1422 1332 1242 mA
Burst read operating current I
CDD4R
4806 3906 3186 mA
Burst write operating current I
CDD4W
4806 4266 3726 mA
Refresh current I
CDD5B
4896 4536 4176 mA
Self refresh temperature current:
MAX T
C
= 85°C
I
CDD6
216 216 216 mA
Self refresh temperature current
(SRT-enabled): MAX T
C
= 95°C
I
CDD6ET
324 324 324 mA
All banks interleaved read current I
CDD7
7506 5976 4806 mA
Reset current I
CDD8
504 504 504 mA
4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 SDRAM RDIMM
I
DD
Specifications
PDF: 09005aef83a71a6a
jdzs36c512_1gx72pz.pdf - Rev. C 3/11 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.

MT36JDZS1G72PZ-1G4D1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 8GB 240RDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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