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VNV10N0713TR

P1-P3P4-P6P7-P9P10-P12P13-P14
VNB10N07/K10N07FM
VNP10N07FI/VNV10N07
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
®
June 1998
BLOCK DIAGRAM (∗)
TYPE V
clamp
R
DS(on)
I
lim
VNB10N07
VNK10N07FM
VNP10N07FI
VNV10N07
70 V
70 V
70 V
70 V
0.1 Ω
0.1 Ω
0.1 Ω
0.1 Ω
10 A
10 A
10 A
10 A
■ LINEAR CURRENT LIMITATION
■ THERMAL SHUT DOWN
■ SHORT CIRCUIT PROTECTION
■ INTEGRATED CLAMP
■ LOW CURRENT DRAWN FROM INPUT PIN
■ DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
■ ESD PROTECTION
■ DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
■ COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNB10N07, VNK10N07FM, VNP10N07FI
and VNV10N07 are monolithic devices made
using STMicroelectronics VIPower M0
Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
1
10
PowerSO-10
1
3
1
2
3
ISOWATT220
D2PAK
TO-263
SOT82-FM
(∗) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
1/14
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
PowerSO-10
D2PAK
SOT-82FM ISOWATT220
V
DS
Drain-source Voltage (V
in
= 0) Internally Clamped V
V
in
Input Voltage 18 V
I
D
Drain Current Internally Limited A
I
R
Reverse DC Output Current -14 A
V
esd
Electrostatic Discharge (C= 100 pF,
R=1.5 KΩ)
2000 V
P
tot
Total Dissipation at T
c
= 25
o
C 50 9.5 31 W
T
j
Operating Junction Temperature Internally Limited
o
C
T
c
Case Operating Temperature Internally Limited
o
C
T
stg
Storage Temperature -55 to 150
o
C
THERMAL DATA
ISOWATT220 PowerSO-10 SOT82-FM D2PAK
R
thj-case
Thermal Resistance
Junction-case Max 4 2.5 13 2.5
o
C/W
R
thj-amb
Thermal Resistance
Junction-ambient Max 62.5 50 100 62.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
CLAMP
Drain-source Clamp
Voltage
I
D
= 200 mA V
in
= 0 607080 V
V
CLTH
Drain-source Clamp
Threshold Voltage
I
D
= 2 mA V
in
= 0 55 V
V
INCL
Input-Source Reverse
Clamp Voltage
I
in
= -1 mA -1 -0.3 V
I
DSS
Zero Input Voltage
Drain Current (V
in
= 0)
V
DS
= 13 V V
in
= 0
V
DS
= 25 V V
in
= 0
50
200
µA
µA
I
ISS
Supply Current from
Input Pin
V
DS
= 0 V V
in
= 10 V 250 500 µA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
IN(th)
Input Threshold
Voltage
V
DS
= V
in
I
D
+ Ii
n
= 1 mA 0.8 3 V
R
DS(on)
Static Drain-source On
Resistance
V
in
= 10 V I
D
= 5 A
V
in
= 5 V I
D
= 5 A
0.1
0.14
Ω
Ω
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
2/14
ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(∗) Forward
Transconductance
V
DS
= 13 V I
D
= 5 A 6 8 S
C
oss
Output Capacitance VDS = 13 V f = 1 MHz V
in
= 0 350 500 pF
SWITCHING (**)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V I
d
= 5 A
V
gen
= 10 V R
gen
= 10 Ω
(see figure 3)
50
80
230
100
100
160
400
180
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V I
d
= 5 A
V
gen
= 10 V R
gen
= 1000 Ω
(see figure 3)
600
0.9
3.8
1.7
900
2
6
2.5
ns
µs
µs
µs
(di/dt)
on
Turn-on Current Slope V
DD
= 15 V I
D
= 5 A
V
in
= 10 V R
gen
= 10 Ω
60 A/µs
Q
i
Total Input Charge V
DD
= 12 V I
D
= 5 A V
in
= 10 V 30 nC
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
SD
(∗) Forward On Voltage I
SD
= 5 A V
in
= 0 1.6 V
t
rr
(∗∗)
Q
rr
(∗∗)
I
RRM
(∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 5 A di/dt = 100 A/µs
V
DD
= 30 V T
j
= 25
o
C
(see test circuit, figure 5)
125
0.3
4.8
ns
µC
A
PROTECTION
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
lim
Drain Current Limit V
in
= 10 V V
DS
= 13 V
V
in
= 5 V V
DS
= 13 V
7
7
10
10
14
14
A
A
t
dlim
(∗∗) Step Response
Current Limit
V
in
= 10 V
V
in
= 5 V
20
50
30
80
µs
µs
T
jsh
(∗∗) Overtemperature
Shutdown
150
o
C
T
jrs
(∗∗) Overtemperature Reset 135
o
C
I
gf
(∗∗) Fault Sink Current V
in
= 10 V V
DS
= 13 V
V
in
= 5 V V
DS
= 13 V
50
20
mA
mA
E
as
(∗∗) Single Pulse
Avalanche Energy
starting T
j
= 25
o
C V
DD
= 20 V
V
in
= 10 V R
gen
= 1 KΩ L = 10 mH
0.4 J
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
3/14
P1-P3P4-P6P7-P9P10-P12P13-P14

VNV10N0713TR

Mfr. #:
Buy VNV10N0713TR
Manufacturer:
STMicroelectronics
Description:
MOSFET OMNIFET 70V 10A POWERSO10
Lifecycle:
New from this manufacturer.
Delivery:
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