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HN4B04J(TE85L,F)

P1-P3P4-P6
HN4B04J
2014-03-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN4B04J
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
Switching application
Q1:
z Excellent h
FE
linearity
: h
FE(2)
=25 (min) at V
CE
= −6V, I
C
= −400mA
Q2:
z Excellent h
FE
linearity
: h
FE(2)
=25 (min) at V
CE
= 6V, I
C
= 400mA
Q1 Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
−35 V
Collector-emitter voltage V
CEO
−30 V
Emitter-base voltage V
EBO
−5 V
Collector current I
C
−500 mA
Q2 Absolute Maximum Ratings (Ta = 25
°
C)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
35 V
Collector-emitter voltage V
CEO
30 V
Emitter-base voltage V
EBO
5 V
Collector current I
C
500 mA
Q1,Q2 Common Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic Symbol Rating Unit
Collector power dissipation P
C
* 300 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. Power dissipation per element should not exceed 200mW.
1.BASE1
2.EMITTER
3.BASE2
4.COLLECTOR2
5.COLLECTOR1
(B1)
(E)
(B2)
(C2)
(C1)
JEDEC ―
JEITA ―
TOSHIBA 2-3L1A
Weight: 0.014g (typ.)
Unit: mm
Start of commercial production
2000-06
HN4B04J
2014-03-01
2
Q1
Electrical Characteristics
(Ta = 25
°
C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
― V
CB
= −35V, I
E
= 0 ― ― −100 nA
Emitter cut-off current I
EBO
― V
EB
= −5V, I
C
= 0 ― ― −100 nA
h
FE(1)
― V
CE
= −1V, I
C
= −100mA 70 ― 240
DC current gain
h
FE(2)
― V
CE
= −6V, I
C
= −400mA 25 ― ―
Collector-emitter saturation voltage V
CE (sat)
― I
C
= −100mA, I
B
= −10mA ― −0.1 −0.25 V
Base-Emitter Voltage V
BE
― V
CE
= −1V, I
C
= −100mA ― −0.8 −1.0 V
Transition frequency f
T
― V
CE
= −6V, I
C
= −20mA ― 200 ― MHz
Collector output capacitance C
ob
― V
CB
= −6V, I
E
= 0, f = 1MHz ― 13 ― pF
Q2
Electrical Characteristics
(Ta = 25
°
C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
― V
CB
= 35V, I
E
= 0 ― ― 100 nA
Emitter cut-off current I
EBO
― V
EB
= 5V, I
C
= 0 ― ― 100 nA
h
FE(1)
― V
CE
= 1V, I
C
= 100mA 70 ― 240
DC current gain
h
FE(2)
― V
CE
= 6V, I
C
= 400mA 25 ― ―
Collector-emitter saturation voltage V
CE (sat)
― I
C
= 100mA, I
B
= 10mA ― 0.1 0.25 V
Base-Emitter Voltage V
BE
― V
CE
= 1V, I
C
= 100mA ― 0.8 1.0 V
Transition frequency f
T
― V
CE
= 6V, I
C
= 20mA ― 300 ― MHz
Collector output capacitance C
ob
― V
CB
= 6V, I
E
= 0, f = 1MHz ― 7 ― pF
Marking Equivalent Circuit (Top View)
31
Q1
5
4
1
23
Q2
HN4B04J
2014-03-01
3
Q1 (PNP transistor)
P1-P3P4-P6

HN4B04J(TE85L,F)

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Description:
Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
Lifecycle:
New from this manufacturer.
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