CDBU40-HF
SMD Schottky Barrier Diode
QW-G1012
Page 1
REV:A
0.071(1.80)
0.063(1.60)
0.014(0.35) Typ.
0.039(1.00)
0.031(0.80)
0.033(0.85)
0.027(0.70)
Dimensions in inches and (millimeter)
0.012 (0.30) Typ.
0.028(0.70) Typ.
O
Maximum Rating (at TA=25 C unless otherwise noted)
Typ
IO
VR(RMS)
VR
VRM
Average forward rectified current
Reverse voltage
Peak reverse voltage
Symbol
Parameter
Conditions
Min
Max
Unit
RMS reverse voltage
mA
V
V
V
200
28
40
40
IFSM
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
A0.6
PD
Power dissipation
mW
150
TSTG
Tj
Storage temperature
Junction temperature
O
C
O
C
+125
+125
-65
Symbol
Typ
Parameter
Conditions Min
Max
Unit
Forward voltage
IF = 40mA
IF = 1mA
VF V
1
0.38
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Reverse current
Capacitance between terminals
Reverse recovery time
VR = 30V
f = 1 MHz, and 0 VDC reverse voltage
IF=IR=10mA,Irr=0.1xIR,RL=100 ohm
IR
CT
Trr
uA
pF
nS
5
5
0.2
Comchip Technology CO., LTD.
0603/SOD-523F
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0603/SOD-523F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BC
-Mounting position: Any
-Weight: 0.003 gram(approx.).
Io = 200 mA
VR = 40 Volts
RoHS Device
Halogen Free
