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SMBT3906DW1T1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
July, 2013 − Rev. 5
1 Publication Order Number:
MBT3906DW1T1/D
MBT3906DW1,
SMBT3906DW1
Dual General Purpose
Transistor
The MBT3906DW1 device is a spin−off of our popular
SOT−23/SOT−323 three−leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−363
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• h
FE
, 100−300
• Low V
CE(sat)
, ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−40 Vdc
Collector−Base Voltage V
CBO
−40 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−200 mAdc
Electrostatic Discharge ESD HBM Class 2
MM Class B
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Package Dissipation (Note 1)
T
A
= 25°C
P
D
150 mW
Thermal Resistance,
Junction−to−Ambient
R
q
JA
833 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
SOT−363/SC−88
CASE 419B
STYLE 1
Q
1
(1)(2)
(3)
(4) (5) (6)
Q
2
MBT3906DW1T1G SOT−363
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MARKING DIAGRAM
A2 = Device Code
M = Date Code
G = Pb−Free Package
A2 M G
G
1
6
http://onsemi.com
(Note: Microdot may be in either location)
SMBT3906DW1T1G SOT−363
(Pb−Free)
3,000 /
Tape & Reel
MBT3906DW1T2G SOT−363
(Pb−Free)
3,000 /
Tape & Reel
MBT3906DW1, SMBT3906DW1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2) V
(BR)CEO
−40 − Vdc
Collector−Base Breakdown Voltage V
(BR)CBO
−40 − Vdc
Emitter−Base Breakdown Voltage V
(BR)EBO
−5.0 − Vdc
Base Cutoff Current I
BL
− −50 nAdc
Collector Cutoff Current I
CEX
− −50 nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= −0.1 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −50 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
h
FE
60
80
100
60
30
−
−
300
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
CE(sat)
−
−
−0.25
−0.4
Vdc
Base −Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
BE(sat)
−0.65
−
−0.85
−0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product f
T
250 − MHz
Output Capacitance C
obo
− 4.5 pF
Input Capacitance C
ibo
− 10.0 pF
Input Impedance
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
h
ie
2.0 12
kW
Voltage Feedback Ratio
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
h
re
0.1 10
X 10
− 4
Small−Signal Current Gain
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
h
fe
100 400
−
Output Admittance
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
h
oe
3.0 60
mmhos
Noise Figure
(V
CE
= −5.0 Vdc, I
C
= −100 mAdc, R
S
= 1.0 k W, f = 1.0 kHz)
NF
− 4.0
dB
SWITCHING CHARACTERISTICS
Delay Time (V
CC
= −3.0 Vdc, V
BE
= 0.5 Vdc) t
d
− 35
ns
Rise Time (I
C
= −10 mAdc, I
B1
= −1.0 mAdc) t
r
− 35
Storage Time (V
CC
= −3.0 Vdc, I
C
= −10 mAdc) t
s
− 225
ns
Fall Time (I
B1
= I
B2
= −1.0 mAdc) t
f
− 75
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
MBT3906DW1, SMBT3906DW1
http://onsemi.com
3
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916
C
s
< 4 pF*
3 V
275
10 k
C
s
< 4 pF*
< 1 ns
+0.5 V
10.6 V
300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2%
t
1
0
10 < t
1
< 500 ms
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
I
C
, COLLECTOR CURRENT (mA)
5000
1.0
V
CC
= 40 V
I
C
/I
B
= 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 40
0.2 0.3 0.5 0.7
Q
T
Q
A
C
ibo
C
obo
T
J
= 25°C
T
J
= 125°C
Figure 5. Turn −On Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
TIME (ns)
1.0 2.0 3.0 10 20
70
5
100
Figure 6. Fall Time
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0
30 50
200
10
30
7
20
t , FALL TIME (ns)
f
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 10
t
r
@ V
CC
= 3.0 V
t
d
@ V
OB
= 0 V
40 V
15 V
2.0 V
P1-P3P4-P6

SMBT3906DW1T1G

Mfr. #:
Buy SMBT3906DW1T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS GP XSTR PNP 40V
Lifecycle:
New from this manufacturer.
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