© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 1
1 Publication Order Number:
NTMFS4C029N/D
NTMFS4C029N
Power MOSFET
30 V, 46 A, Single N−Channel, SO−8 FL
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
15.0
A
T
A
= 80°C 11.2
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.49 W
Continuous Drain
Current R
q
JA
≤ 10 s
(Note 1)
T
A
= 25°C
I
D
22.5
A
T
A
= 80°C 16.8
Power Dissipation
R
q
JA
≤ 10 s (Note 1)
T
A
= 25°C P
D
5.6 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
8.2
A
T
A
= 80°C 6.2
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.75 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
46
A
T
C
=80°C 34
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
23.6 W
Pulsed Drain
Current
T
A
= 25°C, t
p
= 10 ms
I
DM
132 A
Current Limited by Package T
A
= 25°C I
Dmax
80 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
21 A
Drain to Source dV/dt dV/d
t
7.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
GS
= 10 V, I
L
= 25 A
pk
,
L = 0.1 mH, R
GS
= 25 W) (Note 3)
E
AS
31 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at T
J
= 25°C,
V
GS
= 10 V, I
L
= 17 Apk, E
AS
= 14 mJ.
MARKING
DIAGRAMS
www.onsemi.com
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
5.88 mW @ 10 V
46 A
9.0 mW @ 4.5 V
N−CHANNEL MOSFET
G (4)
S (1,2,3)
D (5−8)
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
4C029
AYWZZ
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
S
S
S
G
D
D
D
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4C029NT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4C029NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
