P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 60 Volt V
DS
*R
DS(on)
=5Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-60 V
Continuous Drain Current at T
amb
=25°C I
D
-280 mA
Pulsed Drain Current I
DM
-4 A
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-60 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5 -3.5 V ID=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-0.5
-100
µA
µA
V
DS
=-60 V, V
GS
=0
V
DS
=-48 V, V
GS
=0V, T=125°C(2)
On-State Drain Current(1) I
D(on)
-1 A V
DS
=-18 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
5
Ω
V
GS
=-10V,I
D
=-500mA
Forward Transconductance
(1)(2)
g
fs
150 mS V
DS
=-18V,I
D
=-500mA
Input Capacitance (2) C
iss
100 pF
Common Source Output
Capacitance (2)
C
oss
60 pF V
DS
=-18V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
20 pF
Turn-On Delay Time (2)(3) t
d(on)
7ns
V
DD
≈-18V, I
D
=-500mA
Rise Time (2)(3) t
r
15 ns
Turn-Off Delay Time (2)(3) t
d(off)
12 ns
Fall Time (2)(3) t
f
15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(
3
)
wi
hin
im
m
r
wi
h
Ω
r
im
n
n
<
n
ri
im
n
l
n
r
r
ZVP2106A
3-417
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
I
D(
O
n
)
-
On-
Sta
te
Dr
ain
Cur
r
e
n
t (
Am
ps)
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Normalised R
D
S
(
o
n)
a
nd
V
G
S
(th)
-40
-20 0 20 40 60 80
120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Dr
ain
-
S
o
u
rc
e R
e
s
i
s
ta
n
c
e
R
DS(
o
n
)
G
ate
T
h
res
h
o
l
d
V
o
l
t
ag
e
V
GS
(
t
h)
ID=-0.5A
0-2-4-6-8-100 -10 -20 -30 -40 -50
Saturation Characteristics
V
DS-
Drain Source
Voltage (Volts)
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
-10V
I
D(
O
n
)
-
On-State Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
VGS=-10V
ID=-1mA
VGS=VDS
-3.5
-3.0
-2.0
-0.5
0
-1.0
-2.5
-1.5
2.6
180
VGS=
-20V
-14V
-5V
-6V
-7V
-4V
-3.5V
-8V
VGS=
-18V
I
D(O
n
)
-On-State Drain Current (Amps)
VDS - Drain Source Voltage (Volts)
On-resistance v drain current
ID-Drain Current
(Amps)
R
DS(ON)
-Drain Source Resistance
(Ω)
-0.1 -1.0
10
5
-2.0
-12V
-6V
-4V
0 -2 -4 -6 -8 -10
1
-10V
-9V
-8V
-7V
-5V
-9V
0
-0.6
-0.4
-0.2
-0.8
-1.6
-1.4
-1.2
-1.0
-1.8
-2.0
0
-10
-6
-2
-4
-8
0-2 -4 -6 -8 -10
ID=
-1A
-0.5A
-0.25A
-0.8
-0.6
-0.2
-0.4
VDS=-10V
-1.6
-1.4
-1.0
-1.2
-6V
-7V
VGS=-5V
-8V
-10V -9V
Tj-Junction Temperature (°C)
ZVP2106A
3-418
