2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 20, 2015
IRLH5036PbF
D
S
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
Drain-to-Source Breakdown Voltage 60 ––– ––– V
ΔΒV
/ΔT
Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C
R
Static Drain-to-Source On-Resistance ––– 3.7 4.4
––– 4.6 5.5
V
Gate Threshold Voltage 1.0 ––– 2.5 V
V
Gate Threshold Voltage Coefficient ––– -6.6 ––– mV/°C
I
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 109 ––– ––– S
Q
Total Gate Charge ––– 90 ––– nC
Q
Total Gate Charge ––– 44 66
Q
Pre-Vth Gate-to-Source Charge ––– 9.5 –––
Q
Post-Vth Gate-to-Source Charge ––– 4.5 –––
Q
Gate-to-Drain Charge ––– 18 –––
Q
Gate Charge Overdrive ––– 12 –––
Q
Switch Charge (Q
+ Q
) ––– 23 –––
Q
Output Charge ––– 21 ––– nC
R
G
Gate Resistance ––– 1.2
–––
Ω
t
Turn-On Delay Time ––– 23 –––
t
Rise Time ––– 48 –––
t
Turn-Off Delay Time ––– 28 –––
t
Fall Time ––– 15 –––
C
Input Capacitance ––– 5360 –––
C
Output Capacitance ––– 600 –––
C
Reverse Transfer Capacitance ––– 250 –––
Avalanche Characteristics
Parameter Units
E
Single Pulse Avalanche Energy
mJ
I
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
Continuous Source Current
(Body Diode)
I
Pulsed Source Current
(Body Diode)
V
Diode Forward Voltage ––– ––– 1.3 V
t
Reverse Recovery Time ––– 28 42 ns
Q
Reverse Recovery Charge ––– 134 201 nC
t
Forward Turn-On Time Time is dominated by parasitic Inductance
mΩ
MOSFET symbol
nA
ns
A
pF
nC
V
= 30V
–––
V
= 16V
V
= -16V
––– ––– 400
––– ––– 100
Conditions
V
= 0V, I
= 250uA
Reference to 25°C, I
= 1.0mA
V
= 10V, I
= 50A
Conditions
Max.
286
50
ƒ = 1.0MHz
T
= 25°C, I
= 50A, V
= 30V
di/dt = 500A/μs
T
= 25°C, I
= 50A, V
= 0V
showing the
integral reverse
p-n junction diode.
–––
R
=1.7
V
= 25V, I
= 50A
V
= 60V, V
= 0V, T
= 125°C
μA
I
= 50A
I
= 50A
V
= 0V
V
= 25V
V
DS
= V
GS
, I
D
= 150μA
V
= 4.5V
Typ.
V
= 60V, V
= 0V
V
= 16V, V
= 0V
V
= 30V, V
= 4.5V
V
= 10V, V
= 30V, I
= 50A
V
= 4.5V, I
= 50A
Thermal Resistance
Parameter Typ. Max. Units
R
Junction-to-Mounting Base 0.5 0.8
R
(Top)
Junction-to-Case
––– 15
°C/W
R
Junction-to-Ambient
––– 35
R
(<10s)
Junction-to-Ambient
––– 22