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MUBW20-06A7
P1-P3
P4-P6
P7-P8
© 2001 IXYS All rights reserved
7 - 8
Fig. 13
Typ. turn on energy and switching
Fig.
14
Typ. turn off energy and switching
times versus collector current
times versus collector current
Fig. 15
Typ. turn on energy and switching
Fig.16
Typ. turn off energy and switching
times versus gate resistor
times versus gate resistor
Fig. 17
Reverse
biased safe operating area
Fig. 18
Typ. transient thermal impedance
RBSOA
0
1
02
03
04
0
0
1
2
3
4
0
20
40
60
80
0
1
02
03
04
0
0.0
0.5
1.0
1.5
2.0
0
100
200
300
400
0.0000
1
0.0001
0.001
0.
01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
0
2
04
06
08
0
1
0
0
1
2
0
0.00
0.25
0.50
0.75
1.00
0
125
250
375
500
0
2
04
06
08
0
1
0
0
1
2
0
0.0
0.4
0.8
1.2
1.6
0
20
40
60
80
single p
ulse
V
CE
= 30
0V
V
GE
= ±15V
R
G
= 47
Ω
T
VJ
= 125
°
C
MUBW2006A7
V
CE
= 300V
V
GE
= ±15V
I
C
= 20A
T
VJ
= 125
°
C
0
100
200
300
400
500
600
700
0
10
20
30
40
50
R
G
= 47
Ω
T
VJ
= 125
°
C
V
CE
= 30
0V
V
GE
= ±15V
R
G
= 47
Ω
T
VJ
= 125
°
C
E
on
V
CE
= 300V
V
GE
= ±15V
I
C
= 20A
T
VJ
= 125
°
C
J
d(on)
J
r
E
off
J
d(off)
J
f
E
on
J
d(on)
J
r
E
off
J
d(off)
J
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
mJ
ns
ns
mJ
Output Inverter T1 - T6 / D1 - D6
MUBW 20-06 A7
© 2001 IXYS All rights reserved
8 - 8
Fig. 19
Typ. output
characteristics
Fig. 20
Typ. forward characteristics of
free wheeling diode
Fig. 21
Typ. turn off energy and switching
Fig. 22
Typ. turn off energy and switching
times versus collector current
times versus gate resistor
Fig. 23
Typ. transient thermal impedance
Fig. 24
Typ. thermistorresistance versus
temperature
012345
6
0
10
20
30
40
50
V
GE
= 15V
V
V
CE
A
I
C
T
VJ
= 25
°
C
T
VJ
= 125
°
C
0123
0
4
8
12
16
20
V
V
F
I
F
T
VJ
= 25
°
C
T
VJ
= 125
°
C
A
0
5
10
15
20
25
30
35
0.0
0.5
1.0
1.5
0
100
200
300
V
CE
= 300
V
V
GE
= ±15V
R
G
= 68
Ω
T
VJ
= 125
°
C
E
off
J
d(off)
J
f
I
C
A
E
off
t
mJ
ns
0
20
40
60
80
100
120
0.0
0.2
0.4
0.6
0.8
0
100
200
300
400
V
CE
= 300
V
V
GE
= ±15V
I
C
= 15A
T
VJ
= 125
°
C
E
off
J
d(off)
J
f
Ω
E
off
t
ns
mJ
0.0000
1
0.0001
0.001
0.
01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
single p
ulse
t
s
K/W
Z
thJC
IGBT
diode
0
25
50
75
100
125
150
100
1000
10000
MUBW2006A7
T
°
C
Ω
R
R
G
Brake Chopper T7 / D7
Temperature Sensor NTC
MUBW 20-06 A7
P1-P3
P4-P6
P7-P8
MUBW20-06A7
Mfr. #:
Buy MUBW20-06A7
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 20 Amps 600V
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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Ups
TNT
EMS
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MUBW20-06A7