Table 13: DDR3 I
DD
Specifications and Conditions – 8GB (Die Revision D)
Values are for the MT41K512M4 1.35V DDR3 SDRAM only and are computed from values specified in the 2Gb (512 Meg x
4) component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
TBD 1746 1566 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRE-
CHARGE
I
DD1
1
TBD 2016 1926 mA
Precharge power-down current: Slow exit I
DD2P0
2
TBD 432 432 mA
Precharge power-down current: Fast exit I
DD2P1
2
TBD 1080 900 mA
Precharge quiet standby current I
DD2Q
2
TBD 1260 1080 mA
Precharge standby current I
DD2N
2
TBD 1332 1152 mA
Precharge standby ODT current I
DD2NT
1
TBD 1026 936 mA
Active power-down current I
DD3P
2
TBD 1260 1080 mA
Active standby current I
DD3N
2
TBD 1440 1260 mA
Burst read operating current I
DD4R
1
TBD 2826 2466 mA
Burst write operating current I
DD4W
1
TBD 3006 2646 mA
Refresh current I
DD5B
1
TBD 3816 3636 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
TBD 432 432 mA
Self refresh temperature current (SRT-enabled): MAX T
C
=
95°C
I
DD6ET
2
TBD 540 540 mA
All banks interleaved read current I
DD7
1
TBD 7146 6246 mA
Reset current I
DD8
2
TBD 504 504 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
.
2. All ranks in this I
DD
condition.
4GB, 8GB (x72, ECC, DR) 240-Pin 1.35V DDR3L RDIMM
I
DD
Specifications
PDF: 09005aef83a13f4c
ks-z-f36c512_1gx72pz.pdf - Rev. F 6/11 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
