4 Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
04/22/2015
IS62WV102416ALL
IS62WV102416BLL
IS65WV102416BLL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
Vterm TerminalVoltagewithRespecttoGND –0.5toVdd + 0.5 V
Vdd VddRelatestoGND –0.3to4.0 V
tstg StorageTemperature –65to+150 °C
Pt PowerDissipation 1.0 W
Notes:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamageto
thedevice.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditions
abovethoseindicatedintheoperationalsectionsofthisspecicationisnotimplied.Exposuretoabsolute
maximumratingconditionsforextendedperiodsmayaffectreliability.
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
Cin InputCapacitance Vin = 0V 6 pF
C
i/O
Input/OutputCapacitance VOut = 0V 8 pF
Notes:
1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.
2. Testconditions:T
a = 25°C, f=1MHz,Vdd=3.3V.
TRUTH TABLE
I/O PIN
Mode WE CS1 CS2 OE LB UB I/O0-I/O7 I/O8-I/O15 VDD Current
NotSelected X H X X X X High-Z High-Z isb1, isb2
X X L X X X High-Z High-Z isb1, isb2
X X X X H H High-Z High-Z isb1, isb2
OutputDisabled H L H H L X High-Z High-Z iCC
H L H H X L High-Z High-Z iCC
Read H L H L L H dOut High-Z iCC
H L H L H L High-Z dOut
H L H L L L dOut dOut
Write L L H X L H din High-Z iCC
L L H X H L High-Z din
L L H X L L din din