ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
PS2805C-1 PS2805C-4
Diode Forward Current (DC) IF ±30 mA/ch
Power Dissipation Derating
PD/°C 0.6 0.8 mW/°C
Power Dissipation PD 60 80 mW/ch
Peak Forward Current
*1
IFP ±0.5 A/ch
Transistor Collector to Emitter Voltage VCEO 80 V
Emitter to Collector Voltage VECO 5 V
Collector Current IC 30 mA/ch
Power Dissipation Derating
PC/°C 1.2 mW/°C
Power Dissipation PC 120 mW/ch
Isolation Voltage
*2
BV 2 500 Vr.m.s.
Operating Ambient Temperature TA 55 to +100 °C
Storage Temperature Tstg 55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1%
*2 AC voltage for 1 minute at T
A = 25°C, RH = 60% between input and output
Pins 1-2 shorted together, 3-4 shorted together (PS2805C-1).
Pins 1-8 shorted together, 9-16 shorted together (PS2805C-4).
Data Sheet PN10611EJ01V0DS
4
PS2805C-1,PS2805C-4
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = ±5 mA 1.2 1.4 V
Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 20 pF
Transistor
Collector to Emitter Dark
Current
I
CEO VCE = 80 V, IF = 0 mA 100 nA
Coupled
Current Transfer Ratio
(I
C/IF)
*1
CTR IF = ±5 mA, VCE = 5 V 50 400 %
Collector Saturation
Voltage
V
CE(sat) IF = ±10 mA, IC = 2 mA 0.13 0.3 V
Isolation Resistance RI-O VI-O = 1.0 kVDC 10
11
Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.4 pF
Rise Time
*2
Tr VCC = 5 V, IC = 2 mA, RL = 100 5
µ
s
Fall Time
*2
tf 7
*1 CTR rank
PS2805C-1
N : 50 to 400 (%)
M : 100 to 400 (%)
PS2805C-4
N : 50 to 400 (%)
M : 100 to 400 (%)
*2 Test circuit for switching time
PW = 100 s
Duty Cycle = 1/10
µ
VCC
VOUT
IF
Pulse Input
RL = 100
50
Data Sheet PN10611EJ01V0DS
5
PS2805C-1,PS2805C-4
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
100
80
60
40
20
0
PS2805C-1
PS2805C-4
0.8 mW/˚C
0.6 mW/˚C
0 25 50 75 100 125
Ambient Temperature T
A
(˚C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
160
120
80
40
0
PS2805C-1
PS2805C-4
1.2 mW/˚C
0 25 50 75 100 125
Ambient Temperature T
A
(˚C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
100
1.51.41.31.21.11.00.90.80.7
50
10
5
1
0.5
0.1
0˚C
–25˚C
–55˚C
+60˚C
+25˚C
T
A = +100˚C
0.05
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
30
25
20
15
10
5
0
0246810
I
F
= 10 mA
5 mA
2 mA
1 mA
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Ambient Temperature T
A
(˚C)
Collector to Emitter Dark Current I
CEO
(nA)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
10 000
1 000
100
10
1
0 25 50 75 100
24 V
70 V
V
CE
= 80 V
Collector Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0
I
F
= 10 mA
5 mA
2 mA
1 mA
CTR = 200%
CTR = 250%
CTR = 250%
Remark The graphs indicate nominal characteristics.
Data Sheet PN10611EJ01V0DS
6
PS2805C-1,PS2805C-4

PS2805C-1-A

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
Transistor Output Optocouplers Quad sgl Tr AC Couplr
Lifecycle:
New from this manufacturer.
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