VBT3080S-M3/8W

VBT3080S-M3
www.vishay.com
Vishay General Semiconductor
Revision: 14-May-13
1
Document Number: 87979
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.39 V at I
F
= 5 A
FEATURES
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
PRIMARY CHARACTERISTICS
Package TO-263AB
I
F(AV)
30 A
V
RRM
80 V
I
FSM
200 A
V
F
at I
F
= 30 A 0.73 V
T
J
max. 150 °C
Diode variation Single die
TMBS
®
TO-263AB
NC
A
K
VBT3080S
NC
A
K
HEATSINK
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VBT3080S UNIT
Maximum repetitive peak reverse voltage V
RRM
80 V
Maximum average forward rectified current (fig. 1) I
F(AV)
30 A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
I
FSM
200 A
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
(1)
I
F
= 5 A
T
A
= 25 °C
V
F
0.47 -
V
I
F
= 15 A 0.61 -
I
F
= 30 A 0.82 0.95
I
F
= 5 A
T
A
= 125 °C
0.39 -
I
F
= 15 A 0.57 -
I
F
= 30 A 0.73 0.82
Reverse current
(2)
V
R
= 80 V
T
A
= 25 °C
I
R
70 1000 μA
T
A
= 125 °C 23 45 mA
VBT3080S-M3
www.vishay.com
Vishay General Semiconductor
Revision: 14-May-13
2
Document Number: 87979
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VBT3080S UNIT
Typical thermal resistance R
JC
1.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
ITO-220AB VFT3080S-M3/4W 1.75 4W 50/tube Tube
TO-263AB VBT3080S-M3/4W 1.37 4W 50/tube Tube
Case Temperature (°C)
35
20
0
0 75 175
Average Forward Current (A)
25 100 150
5
50 125
10
30
15
Resistive or Inductive Load
25
Mounted on Specific Heatsink
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
Average Forward Current (A)
30
25
0
015 35
Average Power Loss (W)
52010 30
5
15
D = t
p
/T t
p
T
20
D = 0.8
10
25
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
Instantaneous Forward Voltage (V)
100
0.1
0 0.6 1.1
Instantaneous Forward Current (A)
0.2 0.8
1
0.4 1.0
T
A
= 100 °C
10
0.50.1 0.70.3 0.9
Percent of Rated Peak Reverse Voltage (%)
100
0.001
20 40 100
Instantaneous Reverse Current (mA)
50
1
30 60
10
9070
0.1
0.01
80
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
VBT3080S-M3
www.vishay.com
Vishay General Semiconductor
Revision: 14-May-13
3
Document Number: 87979
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
10 000
100
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1000
Reverse Voltage (V)
0.1 100110
t - Pulse Duration (s)
10
0.1
0.01 10 100
Transient Thermal Impedance (°C/W)
0.1 1
Junction to Case
1
TO-263AB
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) MIN.
0.33 (8.38) MIN.
0.42 (10.66) MIN.
NCA
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
Mounting Pad Layout

VBT3080S-M3/8W

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 30A,80V,TRENCH SKY RECT.
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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