T4-LDS-0218-1, Rev. 2 (11/07/14)(111513) ©2014 Microsemi Corporation Page 1 of 5
1N6638US, 1N6642US, 1N6643US
Available on
commercial
versions
VOIDLESS HERMETICALLY SEALED
SWITCHING DIODES
Qualified per MIL-PRF-19500/578
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
DESCRIPTION
This popular surface mount equivalent JEDEC registered switching/signal diodes are military
qualified and available with internal metallurgical bonded construction. These small low
capacitance diodes with very fast switching speeds are hermetically sealed and bonded into a
“D-5D” package. They may be used in a variety of fast switching applications including
computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire
memories, as well as decoding or encoding applications, etc. Microsemi also offers a variety
of other switching/signal diodes.
“D” SQ-MELF
(D-5D) Package
Also available in:
“D” Package
(axial-leaded)
1N6638_42_43
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered surface mount equivalents of 1N6638, 1N6642, and 1N6643.
Ultra fast recovery time.
Very low capacitance.
Metallurgically bonded.
Non-cavity glass package.
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/578.
Replacements for 1N4148UR, 1N4148UR-1, 1N4150UR-1, and 1N914UR.
RoHS compliant devices available (commercial grade only).
APPLICATIONS / BENEFITS
Small size for high density mounting (see package illustration).
Ideal for:
High frequency data lines
RS-232 & RS–422 Interface Networks
Ethernet: 10 Base T
Switching core drivers
LAN
Computers
MAXIMUM RATINGS @ T
A
= +25
o
C unless otherwise noted.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions Symbol Value Unit
Junction and Storage Temp T
J
and T
STG
-65 to +175
o
C
Thermal Resistance Junction-to-End Cap R
ӨJEC
40
o
C/W
Thermal Resistance Junction-to-Ambient
(1)
R
ӨJA
250
o
C/W
Peak Forward Surge Current @ T
A
= +25
o
C
(Test pulse = 8.3 ms, half-sine wave.)
I
FSM
2.5 A
Average Rectified Forward Current @ T
A
= +75
o
C
(Derate at 4.6 mA/°C Above T
EC
= + 110 °C)
I
O
300 mA
Breakdown Voltage: 1N6638US
1N6642US
1N6643US
V
BR
150
100
75
V
Working Peak Reverse Voltage: 1N6638US
1N6642US
1N6643US
V
RWM
125
75
50
V
NOTES: 1. T
A
= +75 °C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu,
horizontal, in still air; pads for US = .061 inch (1.55 mm) x .105 inch (2.67 mm); R
ΘJA
with a defined PCB
thermal resistance condition included, is measured at I
O
= 300 mA.
