2
Absolute Maximum Rating
[1]
T
A
= 25° C
Symbol Parameter Units Absolute Max.
Vdd, VddBias Supply voltages, bias supply voltage V 6
Vc Control Voltage V (Vdd)
P
in,max
CW RF Input Power dBm 20
P
diss
Total Power Dissipation
[3]
W 7.2
T
j
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to 150
Thermal Resistance
[2,3]
jc
= 13°C/W
Notes:
1. Operation of this device in excess of any
of these limits may cause permanent
damage.
2. Thermal resistance measured using Infra-
Red Measurement Technique at Vdd =
5.5 V operating voltage.
3. Board temperature (TB) is 25° C, for TB
> 56.4° C derate the device power at 77 mW
per °C rise in Board (package belly) tem-
perature.
Electrical Speci cations
T
A
= 25 °C, Vdd = VddBias = 5.0V, Vc1 = 2.4V, Vc2 = 1.6V, Vc3 = 2.2V, Idqtotal = 400mA, RF performance at 1.96 GHz,
W-CDMA Test model #1, 64DPCH downlink signal operation unless otherwise stated.
Symbol Parameter and Test Condition Units Min. Typ. Max.
Vdd Supply Voltage V 5.0
Idqtotal Quiescent Supply Current mA 400 600
Gain Gain dB 38 41.9
OP1dB Output Power at 1dB Gain Compression dBm 37.2
ACLR1 @ Pout = 27.2 dBm W-CDMA Test model #1, 64DPCH downlink signal dBc -50
PAE @ Pout = 27.2 dBm Power Added E ciency % 11.5 13.6
|S11|
Input Return Loss, 50 source
dB 17.3
DetR Detector RF dynamic range dB 20
T
A
= 25 °C, Vdd = VddBias = 5.5V, Vc1 = 2.4V, Vc2 = 1.6V, Vc3 = 2.2V, Idqtotal = 490mA, RF performance at 1.96 GHz,
W-CDMA Test model #1, 64DPCH downlink signal operation unless otherwise stated.
Symbol Parameter and Test Condition Units Typ.
Vdd Supply Voltage V 5.5
Idqtotal Quiescent Supply Current mA 490
Gain Gain dB 41.9
OP1dB Output Power at 1dB Gain Compression dBm 37.6
ACLR1 @ Pout = 27.9 dBm W-CDMA Test model #1, 64DPCH downlink signal dBc -50
PAE @ Pout = 27.9 dBm Power Added E ciency % 13.2
|S11|
Input Return Loss, 50 source
dB 17.5
DetR Detector RF dynamic range dB 20
