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IXFH13N80Q

P1-P2
1 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 800 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MW 800 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C13A
I
DM
T
C
= 25°C, pulse width limited by T
JM
52 A
I
AR
T
C
= 25°C13A
E
AR
T
C
= 25°C28mJ
E
AS
T
C
= 25°C 750 mJ
dv/dt I
S
£ I
DM
, di/dt £ 100 A/ms, V
DD
£ V
DSS
, 5 V/ns
T
J
£ 150°C, R
G
= 2 W
P
D
T
C
= 25°C 250 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
TO-247 AD (IXFH)
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
98626 (6/99)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
V
DSS
V
GS
= 0 V, I
D
= 250 mA 800 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA 2.5 4.5 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= V
DSS
T
J
= 25°C50mA
V
GS
= 0 V T
J
= 125°C1mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
0.70 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
DSS
= 800 V
I
D25
= 13 A
R
DS(on)
= 0.70 W
t
rr
£ 250 ns
Preliminary data sheet
TO-268 (D3) (IXFT) Case Style
(TAB)
G
S
HiPerFET
TM
Power MOSFETs
Q Class
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Q
g
Features
• IXYS advanced low Q
g
process
• International standard packages
• Low R
DS (on)
• Unclamped Inductive Switching (UIS)
rated
• Fast switching
• Molding epoxies meet UL 94 V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
IXFH 13N80Q
IXFT 13N80Q
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test 8 13 S
C
iss
3250 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 310 pF
C
rss
60 pF
t
d(on)
23 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
36 ns
t
d(off)
R
G
= 3.2 W (External) 55 ns
t
f
19 ns
Q
g(on)
90 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
20 nC
Q
gd
30 nC
R
thJC
0.42 K/W
R
thCK
(TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 13 A
I
SM
Repetitive; 52 A
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t
rr
250 ns
Q
RM
I
F
= I
S,
-di/dt = 100 A/ms, V
R
= 100 V 0.8 mC
I
RM
7.5 A
IXFH 13N80Q
IXFT 13N80Q
TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
1
2.7 2.9 .106 .114
A
2
.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
2
1.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
1
13.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
TO-268AA (D
3
PAK)
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
P1-P2

IXFH13N80Q

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Description:
MOSFET 13 Amps 800V 0.8 Rds
Lifecycle:
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