OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IPP100N04S303AKSA1

P1-P3P4-P6P7-P9
IPB100N04S3-03
IPI100N04S3-03, IPP100N04S3-03
OptiMOS
®
-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25°C, V
GS
=10V
1)
100 A
T
C
=100°C, V
GS
=10V
2)
100
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
400
Avalanche energy, single pulse
E
AS
I
D
=80 A
898 mJ
Gate source voltage
V
GS
±20 V
Power dissipation
P
tot
T
C
=25 °C
214 W
Operating and storage temperature
T
j
, T
stg
-55 ... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
V
DS
40 V
R
DS(on)
(SMD Version) 2.5
mΩ
I
D
100 A
Product Summary
Type Package Marking
IPB100N04S3-03 PG-TO263-3-2 3PN0403
IPI100N04S3-03 PG-TO262-3-1 3PN0403
IPP100N04S3-03 PG-TO220-3-1 3PN0403
PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2
Rev. 1.0 page 1 2007-05-03
IPB100N04S3-03
IPI100N04S3-03, IPP100N04S3-03
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
- - 0.7 K/W
Thermal resistance, junction -
ambient, leaded
R
thJA
--62
SMD version, device on PCB
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
3)
--40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
= 1 mA
40 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=150 µA
2.1 3.0 4.0
Zero gate voltage drain current
I
DSS
V
DS
=40 V, V
GS
=0 V,
T
j
=25 °C
--1µA
V
DS
=40 V, V
GS
=0 V,
T
j
=125 °C
2)
- - 100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- - 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=80 A
- 2.2 2.8 mΩ
V
GS
=10 V, I
D
=80 A,
SMD version
- 1.9 2.5
Values
Rev. 1.0 page 2 2007-05-03
IPB100N04S3-03
IPI100N04S3-03, IPP100N04S3-03
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
2)
Input capacitance
C
iss
- 7400 9600 pF
Output capacitance
C
oss
- 2000 2600
Reverse transfer capacitance
C
rss
- 310 465
Turn-on delay time
t
d(on)
-30-ns
Rise time
t
r
-16-
Turn-off delay time
t
d(off)
-46-
Fall time
t
f
-17-
Gate Char
g
e Characteristics
2)
Gate to source charge
Q
gs
-3850nC
Gate to drain charge
Q
gd
-2545
Gate charge total
Q
g
- 110 145
Gate plateau voltage
V
plateau
- 5.2 - V
Reverse Diode
Diode continous forward current
2)
I
S
- - 100 A
Diode pulse current
2)
I
S,pulse
- - 400
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=80 A,
T
j
=25 °C
- 0.85 1.3 V
Reverse recovery time
2)
t
rr
-60-ns
Reverse recovery charge
2)
Q
rr
-95-nC
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=25 V,
f =1 MHz
V
DD
=20 V, V
GS
=10 V,
I
D
=80 A, R
G
=3.3 Ω
V
DD
=32 V, I
D
=80 A,
V
GS
=0 to 10 V
V
R
=20 V, I
F
=50A,
di
F
/dt =100 A/µs
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Current is limited by bondwire; with an R
thJC
= 0.7 K/W the chip is able to carry 218 A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
Rev. 1.0 page 3 2007-05-03
P1-P3P4-P6P7-P9

IPP100N04S303AKSA1

Mfr. #:
Buy IPP100N04S303AKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 40V 100A TO220-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet