DMN3033LDM-7 Datasheet DMN3033LDM-7 | P1-P3

DMN3033LDM

Document number: DS31345 Rev. 4 - 2

1 of 5

www.diodes.com

July 2009

DMN3033LDM

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low Gate Charge

• Low R

DS(ON)

:

• 33 mΩ @V

GS

= 10V

• 40 mΩ @V

GS

= 4.5V

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• "Green" Device (Note 4)

Mechanical Data

• Case: SOT-26

• Case Material - Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.008 grams (approximate)

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage

V

DSS

30 V

Gate-Source Voltage

V

GSS

±20

V

Drain Current (Note 1) Continuous T

A

= 25°C

T

A

= 70°C

I

D

6.9

5.8

A

Pulsed Drain Current (Note 2)

I

DM

20 A

Body-Diode Continuous Current (Note 1)

I

S

2.25 A

Thermal Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)

P

D

2 W

Thermal Resistance, Junction to Ambient (Note 1) t ≤10s

R

θ

JA

62.5

°C /W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Notes: 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.

2. Repetitive Rating, pulse width limited by junction temperature.

3. No purposefully added lead.

4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

SOT-26

TOP VIEW

E

q

uivalent Circuit

G

S

D

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DMN3033LDM

Document number: DS31345 Rev. 4 - 2

2 of 5

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July 2009

DMN3033LDM

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

STATIC CHARACTERISTICS

Drain-Source Breakdown Voltage

BV

DSS

30

⎯ ⎯

V

I

D

= 250μA, V

GS

= 0V

Zero Gate Voltage Drain Current T

J

= 25°C

T

J

= 55°C

I

DSS

⎯ ⎯

1

5

μA

V

DS

= 30V, V

GS

= 0V

Gate-Body Leakage Current

I

GSS

⎯ ⎯

±100

nA

V

DS

= 0V, V

GS

= ±20V

Gate Threshold Voltage

V

GS

(

th

)

1.0

⎯

2.1 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance (Note 5)

R

DS (ON)

⎯

25

36

33

40

mΩ

V

GS

= 10V, I

D

= 6.9A

V

GS

= 4.5V, I

D

= 5.0A

Forward Transconductance (Note 5)

g

FS

⎯

5

⎯

S

V

DS

= 10V, I

D

= 8A

Diode Forward Voltage (Note 5)

V

SD

⎯

0.7 1.1 V

I

S

= 2.25A, V

GS

= 0V

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

C

iss

⎯

755

⎯

pF

V

DS

= 10V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

⎯

136

⎯

pF

Reverse Transfer Capacitance

C

rss

⎯

108

⎯

pF

Gate Resisitance

R

G

⎯

0.89

⎯ Ω

V

GS

= 0V, V

DS

= 0V, f = 1MHz

SWITCHING CHARACTERISTICS

Total Gate Charge

Q

g

⎯

6.4

13.0

⎯

nC

V

GS

= 4.5V, V

DS

= 15V, I

D

= 5A

V

GS

= 10V, V

DS

= 15V, I

D

= 6.9A

Gate-Source Charge

Q

g

s

⎯

1.9

⎯

nC

V

GS

= 10V, V

DS

= 15V, I

D

= 6.9A

Gate-Drain Charge

Q

g

d

⎯

3.2

⎯

nC

V

GS

= 10V, V

DS

= 15V, I

D

= 6.9A

Turn-On Delay Time

t

D

(

on

)

⎯

11

⎯

ns

V

DD

= 15V, V

GS

= 10V,

R

D

= 1.8Ω, R

G

= 6Ω

Turn-On Rise Time

t

r

⎯

7

⎯

ns

Turn-Off Delay Time

t

D

(

off

)

⎯

63

⎯

ns

Turn-Off Fall Time

t

f

⎯

30

⎯

ns

Notes: 5. Test pulse width t = 300ms.

6. Guaranteed by design. Not subject to production testing.

0

2

4

6

8

10

12

14

16

18

20

01 234

V = 5V

Pulsed

DS

DMN3033LDM

Document number: DS31345 Rev. 4 - 2

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www.diodes.com

July 2009

DMN3033LDM

0.01

0.02

0.03

0.04

0.05

0.06

02468101214161820

V = 4.5V

GS

V = 10V

GS

I , DRAIN CURRENT (A)

Fig. 3

D

On-Resistance vs. Drain Current and Gate Voltage

R , STATIC DRAIN-SOURCE ON-RESISTANCE ( )

DS(on)

Ω

Fig. 4 Typical Total Capacitance

0

200

400

600

800

1,000

1,200

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

C

,

C

A

P

A

C

I

T

AN

C

E (p

F

)

T

C

iss

C

oss

C

rss

f = 1 MHz

V = 0V

GS

0

0.5

1

1.5

2

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (C)

A

R , STATIC DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

Fig. 6 Normalized Static Drain-Source On-Resistance

vs. Ambient Temperature

V = 10V

I = 6A

GS

D

V = 4.5V

I = 5A

GS

D

DMN3033LDM-7

DMN3033LDM-7

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