Characteristics STPS50U100C
2/8 Doc ID 16603 Rev 2
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
ΔT
j
(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode2) x R
th(c)
To evaluate the conduction losses use the following equation: P = 0.475 x I
F(AV)
+ 0.009 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(RMS)
Forward rms current 50 A
I
F(AV)
Average forward current, δ = 0.5
T
C
= 120 °C
T
C
= 105 °C
Per diode
Per device
25
50
A
I
FSM
Surge non repetitive forward current t
p
= 10 ms, half sine-wave 250 A
T
stg
Storage temperature range -65 to + 150 °C
T
j
Maximum operating junction temperature
(1)
150 °C
1. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
<
1
Rth(j-a)
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th (j-c)
Junction to case
Per diode
Per device
1.3
0.9
°C/W
R
th (c)
Coupling 0.45 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
Reverse leakage current
T
j
= 25 °C
V
R
= 70 V
-15-µA
T
j
= 125 °C - 10 - mA
T
j
= 25 °C
V
R
= V
RRM
-30200µA
T
j
= 125 °C - 15 40 mA
V
F
Forward voltage drop
T
j
= 25 °C
I
F
= 5 A
-0.48-
V
T
j
= 125 °C - 0.38 -
T
j
= 25 °C
I
F
= 15 A
-0.58-
T
j
= 125 °C - 0.54 -
T
j
= 25 °C
I
F
= 25 A
-0.670.73
T
j
= 125 °C - 0.64 0.7
