BU10105S-E3/45

BU1006-E3, BU1008-E3, BU1010-E3
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
1
Document Number: 84801
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Enhanced isoCink+™ Bridge Rectifiers
* Tested to UL standard for safety electrically isolated
semiconductor devices. UL 1557 4th edition.
Dielectric tested to maximum case, storage and junction
temperature to 150 °C to withstand 1500 V.
Epoxy meets UL 94 V-0 flammability rating.
FEATURES
• UL recognition file number E309391 (QQQX2)
UL 1557 (see *)
Thin single in-line package
Available for BU-5S lead forming option
(part number with “5S” suffix, e.g. BU10065S)
Superior thermal conductivity
Solder dip 275 °C max. 10 s, per JESD 22-B106
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications.
MECHANICAL DATA
Case: BU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Notes
(1)
With 60 W air cooled heatsink
(2)
Without heatsink, free air
PRIMARY CHARACTERISTICS
Package BU
I
F(AV)
10 A
V
RRM
600 V, 800 V, 1000 V
I
FSM
120 A
I
R
5 µA
V
F
at I
F
= 5.0 A 0.88 V
T
J
max. 150 °C
Diode variations In-Line
+
~
~
-
-
~
~
+
isoCink+™
Case Style BU
+ ~~ -
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BU1006 BU1008 BU1010 UNIT
Maximum repetitive peak reverse voltage V
RRM
600 800 1000 V
Average rectified forward current (Fig. 1, 2)
T
C
= 92 °C
(1)
I
O
10
A
T
A
= 25 °C
(2)
3.2
Non-repetitive peak forward surge current
8.3 ms single sine-wave, T
J
= 25 °C
I
FSM
120 A
Rating for fusing (t < 8.3 ms) T
J
= 25 °C I
2
t60A
2
s
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
BU1006-E3, BU1008-E3, BU1010-E3
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
2
Document Number: 84801
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Notes
(1)
With 60 W air cooled heatsink
(2)
Without heatsink, free air
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise specified)
Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Forward Current Derating Curve
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous forward
voltage per diode
(1)
I
F
= 5.0 A
T
A
= 25 °C
V
F
0.98 1.05
V
T
A
= 125 °C 0.88 0.95
Maximum reverse current per diode rated V
R
T
A
= 25 °C
I
R
-5.0
μA
T
A
= 125 °C 64 250
Typical junction capacitance per diode 4.0 V, 1 MHz C
J
43 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BU1006 BU1008 BU1010 UNIT
Typical thermal resistance
R
JC
(1)
3.0
°C/W
R
JA
(2)
20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BU1006-E3/45 4.55 45 20 Tube
BU1006-E3/51 4.55 51 250 Paper tray
BU10065S-E3/45 4.55 45 20 Tube
0
60
120
160
0
2
4
6
8
12
Case Temperature (°C)
Average Forward Output Current (A)
With Heatsink
Sine-Wave, R-Load
T
C
Measured at Device Bottom
T
C
T
C
10
20
80
140
40
100
0
1
2
3
4
Ambient Temperature (°C)
Average Forward Rectified Current (A)
0
50
25
75
100
125
150
Without Heatsink
Sine-Wave, R-Load
Free Air, T
A
BU1006-E3, BU1008-E3, BU1010-E3
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
3
Document Number: 84801
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Forward Power Dissipation
Fig. 4 - Typical Forward Characteristics Per Diode
Fig. 5 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
012345678 91011
0
8
12
16
20
24
Average Forward Current (A)
Forward Power Dissipation (W)
4
0.3 1.1 1.2 1.3
0.01
10
0.1
1
100
0.5 0.7 0.9
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.4
0.6 0.8 1.0
1000
2010 604030 50 70 90 100
80
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
1
10
100
10
100
Reverse Voltage (V)
Junction Capacitance (pF)

BU10105S-E3/45

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Bridge Rectifiers 10 Amp 1000 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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