2SD1759TL

2SD1759 / 2SD1861
Transistors
Rev.A 1/2
Power transistor (40V, 2A)
2SD1759 / 2SD1861
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in 4k resistor between base and emitter.
3) Complements the 2SB1183 / 2SB1239.
zEquivalent circuit
R
BE
4k
C
B
E
: Collector
: Base
: Emitter
C
B
E
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
V
CBO
V
CER
V
EBO
I
C
P
C
Tj
Tstg
Limits
40
40
5
2
1
150
55 to +150
Unit
V
V(R
BE
=10k)
V
A(DC)
W
1
W(T
C
=25°C)
10
2SD1861
2SD1759
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger.
zPackaging specifications and h
FE
Type 2SD1759
CPT3
1k to 200k
TL
2500
2SD1861
ATV
1k to
TV2
2500
Package
h
FE
Code
Basic ordering unit (pieces)
zExternal dimensions (Unit : mm)
(1) Base
(2) Collector
(3) Emitter
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(
2
)
(
3
)
C0.5
0.65
0.9
(
1
)
0.75
2.3
0.9
1.5
5.5
5.1
(1) Emitter
(2) Collector
(3) Base
0.451.05
Taping specifications
0.5
(
1
)
0.65Max.
2.54
(
2
)
2.54
(
3
)
6.8
1.0
14.5
0.9
4.4
2.5
2SD1759
ROHM : CPT3
EIAJ : SC-63
2SD1861
ROHM : ATV
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ. Max. Unit Conditions
BV
CBO
BV
CER
BV
EBO
I
CBO
I
EBO
V
CE(sat)
Cob
40
40
5
1000
0.8
11
1
1
1.5
20000
V
V
V
µA
µA
V
pF
I
C
=50µA
I
C
=1mA , R
BE
=10k
I
E
=50µA
V
CB
=24V
V
EB
=4V
I
C
/I
B
=0.6A/1.2mA
V
CE
/I
C
=3V/0.5A
h
FE
2SD1759
2SD1861 1000
−−
V
CB
=10V , I
E
=0A , f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
f
T
150 MHz V
CE
=6V , I
E
= −0.1A , f=100MHz
Transition frequency
Collector-emitter saturation voltage
DC current
transfer ratio
Output capacitance
2SD1759 / 2SD1861
Transistors
Rev.A 2/2
zElectrical characteristics curves
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Ground emitter output characteristics
0
1.0
0.8
0.6
0.4
0.2
543210
Ta
=
25
°C
I
B
=
0
µ
A
10
µ
A
20
µ
A
30
µ
A
40
µ
A
50
µ
A
60
µ
A
70
µ
A
80
µ
A
100µA
90
µA
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.2
Ground emitter propagation characteristics
1
2
5
10
20
50
100
200
500
1000
2000
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.00
Ta
=
25
°C
V
CE
=
3V
COLLECTOR CURRENT : I
C
(mA)
DC CURRENT GAIN : h
FE
Fig.3 DC current gain vs. collector current
2000
5000
10000
20000
50000
1 2 5 10 20 50 100 200 500 1000 50002000
Ta
=
25°C
V
CE
=3V
1
V
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.4 Collector-emitter saturation voltage
vs. collector current
0.2
0.5
1.0
2.0
5.0
1 2 5 10 20 50 100 200 500 1000 2000
Ta=25°C
I
C
/I
B
=1000
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR OUTPUT CAPACITANCE :Cob
(pF)
Fig.5 Colletor output capacitance
vs. collector-base voltage
20
50
10
1
2
5
1 2 5 10 20 50 1000.1 0.2 0.5
Ta
=
25
°C
f=1MHz
I
C
=0A
EMITTER TO BASE VOLTAGE : V
EB
(V)
EMITTER INPUT CAPACITANCE :Cib
(pF)
Fig.6 Emitter input capacitance
vs. emitter-base voltage
20
50
10
1
2
5
1 2 5 10 20 50 1000.1 0.2 0.5
Ta
=
25
°C
f=1MHz
I
C
=0A
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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ROHM CO., LTD. is granted to any such buyer.
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About Export Control Order in Japan
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Order in Japan.
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2SD1759TL

Mfr. #:
Manufacturer:
Description:
Darlington Transistors NPN 40V 2A
Lifecycle:
New from this manufacturer.
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