OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

DB4X501K0R

P1-P3P4-P5
Product Standards
Schottky Barrier Diode
DB4X501K0R
Absolute Maximum Ratings Ta = 25 C
Note: *1
Value of each diode in series diodes used.
*2
50 Hz sine wave 1 cycle (Non-repetitive peak current)
Page
Junction temperature Tj 125
+85
°C-55 to +125
°C
Storage temperature Tstg
-40 toToprOperating ambient temperature
Rating
Reverse voltage VR 50
Parameter Symbol
1of4
Unit: mm
3. Cathode 2
4. Cathode 12. Anode 2
Low terminal capacitance Ct
Short reverse recovery time trr
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
4H
DB4X501K0
R
Silicon epitaxial planar type
For high speed switching circuits
DB2J501 in Mini4 type package
Features
Basic Part Number :
Marking Symbol
:
Code
1. Anode 1
TO-253/SOT-143
Panasonic
Repetitive peak reverse voltage VRRM
300
°C
0.75
V50
1
150
IFSM
Internal Connection
Unit
Mini4-G4-B
JEITA SC-61AB
V
Dual DB2J501 (Parallel)
Packaging
000 pcs / reel (standard)3Embossed type (Thermo-compression sealing) :
IFM
Non-repetitive peak
forward surge current *
2
Single
Double
*1
Peak forward current
Double
*1
A
mA
Forward current (Average)
Single
Double
*1
mAIF(AV)
225
200
Single
2.8
1.1
1.5
(0.95)
1.9
0.13
0.40.65
(0.2)
1
34
2
2.9
(0.95)
1 2
34
Doc No.
TT4-EA-12390
Revision.
3
Established
:
Revised
:
Product Standards
Schottky Barrier Diode
DB4X501K0R
Electrical Characteristics Ta = 25 C 3 C
Note: 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031
measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 000 MHz.
4. *1 : trr measurement circuit
Page
Terminal capacitance Ct
VR = 10 V, f = 1 MHz
Reverse recovery time
*1
trr
0.36
IR
VR = 50 V
VF1
IF = 30 mA
4
of 4
Min Typ
200
2
pF
Parameter Symbol Conditions UnitMax
μA
Reverse current
Forward voltage
VF2
IF = 200 mA
0.55
V
ns
IF = IR = 100 mA
1.6
Irr = 10 mA, RL = 100
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 μs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse Output Pulse
Doc No.
TT4-EA-12390
Revision.
3
Established
:
Revised
:
Product Standards
Schottky Barrier Diode
DB4X501K0R
Technical Data ( reference )
Page 3 of 4
IF - VF
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V)
Forward current IF (A)
-40 ℃
25 ℃
85 ℃
100 ℃
125 ℃
IR - VR
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0 1020304050
Reverse voltage VR (V)
Reverse current IR (A)
-40 ℃
25 ℃
85 ℃
Ta = 125 ℃
100 ℃
Ct - VR
0
4
8
12
16
20
24
0 10203040
Reverse voltage VR (V)
Terminal capacitance (pF)
Ta = 25 ℃
f = 1 MHz
Doc No.
TT4-EA-12390
Revision.
3
Established
:
Revised
:
P1-P3P4-P5

DB4X501K0R

Mfr. #:
Buy DB4X501K0R
Manufacturer:
Panasonic
Description:
Schottky Diodes & Rectifiers SCHOTTKY BARRIER GL WNG 2.9x2.8mm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet