IXTQ152N085T

© 2006 IXYS CORPORATION All rights reserved
DS99699 (11/06)
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 175°C85V
V
DGR
T
J
= 25°C to 175°C; R
GS
= 1 MΩ 85 V
V
GSM
Transient ± 20 V
I
D25
T
C
= 25°C 152 A
I
LRMS
Lead Current Limit, RMS 75 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
410 A
I
AR
T
C
= 25°C25A
E
AS
T
C
= 25°C 750 mJ
dv/dt I
S
I
DM
, di/dt 100 A/μs, V
DD
V
DSS
3 V/ns
T
J
175°C, R
G
= 5 Ω
P
D
T
C
= 25°C 360 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
T
SOLD
Plastic body for 10 seconds 260 °C
M
d
Mounting torque 1.13 / 10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-247 6 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0 V, I
D
= 250 μA85V
V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 4.0 V
I
GSS
V
GS
= ± 20 V, V
DS
= 0 V ± 200 nA
I
DSS
V
DS
= V
DSS
5 μA
V
GS
= 0 V T
J
= 150°C 250 μA
R
DS(on)
V
GS
= 10 V, I
D
= 25 A, Notes 1, 2 5.5 7.0 mΩ
TrenchMV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH152N085T
IXTQ152N085T
V
DSS
=85 V
I
D25
= 152 A
R
DS(on)
7.0 m
ΩΩ
ΩΩ
Ω
TO-3P (IXTQ)
Preliminary Technical Information
G
D
S
TO-247 (IXTH)
G
S
D
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
(TAB)
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH152N085T
IXTQ152N085T
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 60 A, Note 1 60 100 S
C
iss
5500 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 720 pF
C
rss
150 pF
t
d(on)
Resistive Switching Times 30 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A 50 ns
t
d(off)
R
G
= 5 Ω (External) 50 ns
t
f
45 ns
Q
g(on)
114 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A 30 nC
Q
gd
35 nC
R
thJC
0.42°C/W
R
thCS
0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
T
J
= 25°C unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0 V 152 A
I
SM
Pulse width limited by T
JM
410 A
V
SD
I
F
= 25 A, V
GS
= 0 V, Note 1 1.0 V
t
rr
I
F
= 25 A, -di/dt = 100 A/μs90ns
V
R
= 40 V, V
GS
= 0 V
Notes: 1. Pulse test, t 300 μs, duty cycle d 2 %;
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5 mm or less from the package body.
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
TO-247AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
© 2006 IXYS CORPORATION All rights reserved
IXTH152N085T
IXTQ152N085T
Fig. 1. Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
7V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
30
60
90
120
150
180
210
240
270
300
012345678
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
7V
5V
Fig. 3. Output Characteristics
@ 150ºC
0
20
40
60
80
100
120
140
160
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
5V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 76A Value
vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 152A
I
D
= 76A
Fig. 5. R
DS(on)
Normalized to I
D
= 76A Value
vs. Drain Current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0 50 100 150 200 250 300
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V - - - -
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
20
40
60
80
100
120
140
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit for TO-263 (7-Lead)
External Lead Current Limit for TO-3P, TO-220, & TO-263

IXTQ152N085T

Mfr. #:
Manufacturer:
Description:
MOSFET N-CH 85V 152A TO-3P
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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