ARF477FL Datasheet ARF477FL | P1-P3

050-4952 C 6-2014

ARF477FL

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise speciﬁ ed.

RF POWER MOSFET

N-CHANNEL PUSH - PULL PAIR 165V 400W 100MHz

The ARF477FL is a matched pair of RF power transistors in a common source conﬁ guration. It is designed for high

voltage push-pull or parallel operation in ISM and MRI power ampliﬁ ers up to 100 MHz.

• Speciﬁ ed 150 Volt, 65 MHz Characteristics:

• Output Power = 400 Watts

• Gain = 15dB (Class AB)

• Efﬁ ciency = 50% min

• High Performance Push-Pull RF Package.

• High Voltage Breakdown and Large SOA

for Superior Ruggedness.

• Low Thermal Resistance.

• RoHS Compliant

ARF477FL

Common Source

Push-Pull Pair

S

D

G

S

ARF477FL

Symbol Parameter Ratings Unit

V

DSS

Drain-Source Voltage 500

V

DGO

Drain-Gate Voltage 500

I

D

Continuous Drain Current @ T

C

= 25°C (each device) 15 A

V

GS

Gate-Source Voltage ±30 V

P

D

Total Power Dissipation @ T

C

= 25°C 750 W

T

J

, T

STG

Operating and Storage Junction Temperature Range -55 to 175

°C

T

L

Lead Temperature: 0.063” from Case for 10 Sec. 300

Static Electrical Characteristics

Symbol Parameter Min Typ Max Unit

BV

DSS

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250 A) 500

V

DS(ON)

On State Drain Voltage

1

(I

D(ON)

= 7.5A, V

GS

= 10V) 2.9 4

I

DSS

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V) 25

A

Zero Gate Voltage Drain Current (V

DS

= 50V

DSS

, V

GS

= 0, T

C

= 125°C) 250

I

GSS

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V) ±100 nA

g

fs

Forward Transconductance (V

DS

= 15V, I

D

= 7.5A) 3.5 5.6 8 mhos

g

fs1

/g

fa2

Forward Transconductance Match Ratio (V

DS

= 15V, I

D

= 5A) 0.9 1.1

V

GS(TH)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 50mA) 35

V

GS(TH)

Gate Threshold Voltage Match (V

DS

= V

GS

, I

D

= 50mA) 0.2 Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Symbol Parameter Min Typ Max Unit

R

JC

Junction to Case 0.18 0.2

°C/W

R

JHS

Junction to Sink (High Efﬁ ciency Thermal Joint Compound and Planar Heat Sink Surface.) 0.30 0.32

Thermal Characteristics

Microsemi Website - http://www.microsemi.com

050-4952 C 6-2014

ARF477FL

0.10

1.00

10.00

56.00

1 5 10 50 100 500

DYNAMIC CHARACTERISTICS (per section)

16

12

8

4

0

2 4 6 8 10

CAPACITANCE (pf)

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 2, Typical Capacitance vs. Drain-to-Source Voltage

5000

1000

500

100

50

10

.1 .5 1 5 10 50 150

I

D

, DRAIN CURRENT (AMPERES)

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 4, Typical Maximum Safe Operating Area

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 3, Typical Transfer Characteristics

I

D

, DRAIN CURRENT (AMPERES)

V

DS

> I

D

(ON) x R

DS

(ON)MAX.

250SEC. PULSE TEST

@ <0.5 % DUTY CYCLE

T

J

= -55°C

T

J

= -55°C

T

J

= +125°C

T

J

= +25°C

T

C

=+25°C

T

J

=+150°C

SINGLE PULSE

OPERATION HERE

LIMITED BY R

DS

(ON)

C

iss

C

oss

C

rss





V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 1, Typical Output Characteristics

25

20

15

10

5

0

0 5 10 15 20 25 30

I

D

, DRAIN CURRENT (AMPERES)

6.5V

5.5V

6V

7V

V

GS

=15 & 10V

9V

8V

4.5V

5V



Symbol Parameter Test Conditions Min Typ Max Unit

C

ISS

Input Capacitance V

GS

= 0V 1200 1400

pF

C

oss

Output Capacitance

V

DS

= 150V

f = 1MHz

150 180

C

rss

Reverse Transfer Capacitance 60 75

t

d(on)

Turn-on Delay Time

V

GS

= 15V

V

DD

= 250V

I

D

= I

D[Cont.]

@ 25°C

R

G

= 1.6 

7

nS

t

r

Rise Time 6

t

d(off)

Turn-off Delay Time 20

t

f

Fall Time 4.0 7

Functional Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

G

PS

Common Source Ampliﬁ er Power Gain

f = 65MHz

I

dq

= 0mA V

DD

= 150V

P

OUT

= 400W

14

16 dB



Drain Efﬁ ciency

50 55 %



Electrical Ruggedness VSWR 10:1 No Degradation in Output Power

1. Pulse Test: Pulse width < 380 S, Duty Cycle < 2%.

Microsemi reserves the right to change, without notice, the speciﬁ cations and information contained herein.

050-4952 C 6-2014

ARF477FL

Figure 5b, TRANSIENT THERMAL IMPEDANCE MODEL

0

0.05

0.10

0.15

0.20

0.25

10

-5

10

-4

10

-3

10

-2

10 1.0

-1

Z



JC

, THERMAL IMPEDANCE (°C/W)

0.3

D = 0.9

SINGLE PULSE

RECTANGULAR PULSE DURATION (SECONDS)

Figure 5a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

0.5

0.1

0.05

Peak T

J

= P

DM

x Z

θJC

+

T

C

Duty Factor D =

t

1

/

t

2

t

2

t

1

P

DM

Note:

0.7

Dissipated Powe r

(Watts )

T

J

(˚C ) T

C

(˚C )

Z

EXT

are the external ther mal

impedances : Case to sink ,

sink to ambient, et c. Set to

zero when modeling onl y

the case to junction .

Z

EXT

.0915

.108

.0111F

.133F

Freq. (MHz) Z

in

()Z

OUT

()

40

60

80

1.5 - j 10

1.9 - j 1.3

2.2 - j 0.82

24 - j 37

13 - j 29

7.9 - j 24

Z

IN

- Gate shunted with 100 I

dq

= 0

Z

OL

- Conjugate of optimum load for 400 Watts output at V

dd

=125V

ARF477FL

ARF477FL

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