OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IPS7071GPBF

P1-P3P4-P6P7-P9P10-P11
Data sheet No. PD60309
IPS7071GPbF
PROTECTED HIGH SIDE SWITCH
Features
• Over temperature shutdown (with auto-restart)
• Short circuit protection (current limit)
• Active clamp
• Open load detection
from power ground
ection
escription
is a fully protected five terminal high
• Logic ground isolated
• ESD protection
• Ground loss prot
• Status feedback
D
The IPS7071GPbF
side switch with built in short circuit, over-temperature,
ESD protection, inductive load capability and diagnostic
feedback. The output current is limited at Ilim value.
Current limitation is activated until the thermal protection
acts. The over-temperature protection turns off the device
if the junction temperature exceeds Tshutdown. It will
automatically restart after the junction has cooled 7°C
below Tshutdown. A diagnostic pin is provided for status
feedback of short circuit, over-temperature and open load
detection. The double level shifter circuitry allows large
offsets between the logic ground and the load.
Product Summary
Rds(on) 110mΩ max.
Vclamp 70V
I Limit 5A
Open load 3V
Package
SO8
IPS7071GPbF
Typical Connection
Out
Control
Dg
Rin
Vcc
Load
+Bat
Input Signal
V Diag
In Gnd
Rdg
Pull-up resistor for Open
Load Off detection
15K
+5V
www.irf.com
1
IPS7071GPbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to Ground lead. (Tambient=25°C unless otherwise specified).
Symbol Parameter Min. Max. Units
Vout Maximum output voltage Vcc-65 Vcc+0.3
Voffset Maximum logic ground to load ground offset Vcc-65 Vcc+0.3
Vin Maximum input voltage -0.3 5.5
Vcc max. Maximum Vcc voltage
⎯
65
Vcc cont. Maximum continuous Vcc voltage
⎯
35
V
Iin max. Maximum IN current -1 10
Idg max. Maximum diagnostic output current -1 10
mA
Vdg Maximum diagnostic output voltage -0.3 5.5 V
Maximum power dissipation (internally limited by thermal protection)
Pd
Rth=100°C/W
⎯
1.25 W
Isd cont. Maximum continuous diode current (Rth=100°C/W)
⎯
1.8 A
ESD1
Electrostatic discharge voltage (Human body) 100pF, 1500Ω
⎯
4
ESD2
Electrostatic discharge voltage (Machine Model) C=200pF,R=0Ω,L=10µH
⎯
0.5
kV
Tj max. Max. storage & operating temperature junction temperature -40 +150 °C
Thermal Characteristics
Symbol Parameter Typ. Max. Units
Rth1 Thermal resistance junction to ambient IPS7071G 100
⎯
°C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
VIH High level input voltage 4 5.5
VIL Low level input voltage -0.3 0.9
Iout Continuous drain current, Tamb=85°C, Tj=125°C, Vin=5V, Rth=100°C/W
⎯
1.5 A
Rin Recommended resistor in series with IN pin 4 10
Rdgs Recommended resistor in series with DG pin 10 20
Rol Recommended pull-up resistor for open load detection 5 100
kΩ
www.irf.com
2
IPS7071GPbF
Static Electrical Characteristics
Max. Units Test Conditions
Tj=25°C, Vcc=14V (unless otherwise specified)
Symbol Parameter Min. Typ.
ON state resistance Tj=25°C
⎯
80 110 , 5Vin=5V Iout=2. A
ON state resistance Tj=150°C (1)
⎯
130 175 A Vin=5V, Iout=2.5
Rds(on)
⎯
90 120
mΩ
A ON state resistance Tj=25°C, Vcc=6.5V Vin=5V, Iout=2.5
Vcc op. 6
⎯
35
Operating voltage range
V clamp 1 Vcc to Out clamp voltage 1 65 70
⎯
Iout=10mA (see Fig. 1)
V clamp 2 Vcc to Out clamp voltage 2 (1)
⎯
70 75 Iout=1A (see Fig. 1)
Vf Body diode forward voltage
⎯
1 1.35
V
Io 2.5Aut=
Icc Off Supply current when Off
⎯
2.5 10 µA V V, Vout=0V in=0
Icc On
⎯
2.5 3.5 mA V
Supply current when On
Vin=5
Iout@0V
V 0V
Output leakage current
⎯
1.1
10 out=
Iout@6V utput leakage current 20
⎯
Vout=6V
O
⎯
Idg leakage
⎯
10
µA
V 5.5V
Diagnostic output leakage current
⎯
dg=
Vdgl Low level diagnostic output voltage
⎯
0.2 0.3 Idg=1.6mA
Vih Input high threshold voltage
⎯
2.5 3.5
Vil Input low threshold voltage
1
2
⎯
In hys Input hysteresis 0.15 0.4 1
UV high Under voltage high threshold voltage
⎯
5 5.9
UV low Under voltage low threshold voltage 3.4 4.5
⎯
UV hys U 0.8 1.5
V
ndervoltage hysteresis 0.1
Iin On In 40 80 µA V put current when device is On
⎯
Vin=5
(1) Guaranteed by design
P Min. Typ. Max. Units o n
Switching Electrical Characteristics
Vcc=14V, Resistive load=14Ω, Vin=5V, Tj=25°C
Symbol arameter Test C nditio s
Tdon T
⎯
11 35
urn-on delay time
Tr1 Rise time to Vout=Vcc-5V
⎯
7 40
Tr2 R
µs
ise time to Vout=0.9 x Vcc
⎯
15 50
dV/dt (On) T
1.3 4 V/µs
urn On dV/dt
⎯
EOn T 75
⎯
µJ
urn On energy
⎯
Tdoff T
45
urn-off delay time
⎯
23
Tf Fall time to Vout=0.1 x Vcc
⎯
6 25
µs
dV/dt (Off) Turn Off dV/dt
⎯
2 6 V/µs
EOff Turn Off energy
⎯
25
⎯
µJ
See Fig. 3
Tdiag Vout to Vdiag propagation delay
⎯
15
⎯
µs See Fig. 4 and Fig. 12
www.irf.com
3
P1-P3P4-P6P7-P9P10-P11

IPS7071GPBF

Mfr. #:
Buy IPS7071GPBF
Manufacturer:
Infineon / IR
Description:
Gate Drivers 75V 1A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet