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PNE20020ERX

P1-P3P4-P6P7-P9P10-P12P13-P13
Nexperia
PNE20020ER
200 V, 2 A hyperfast PN-rectifier
PNE20020ER All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 30 August 2017 4 / 13
aaa-026488
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
-1
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
duty cycle = 1
0.01
0.02
0.75
0.50
0.25
0.20
0.10
0.05
0
0.33
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-026489
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
-1
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
duty cycle = 1
0.02
0
0.01
0.05
0.10
0.50
0.75
0.33
0.20
0.25
FR4 PCB, mounting pad for cathode 1 cm
2
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Nexperia
PNE20020ER
200 V, 2 A hyperfast PN-rectifier
PNE20020ER All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 30 August 2017 5 / 13
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)R
reverse breakdown
voltage
I
R
= 100 µA; pulsed; T
j
= 25 °C [1] 200 - - V
I
F
= 2 A; pulsed; T
j
= 25 °C [1] - 915 980 mVV
F
forward voltage
I
F
= 2 A; pulsed; T
j
= 125 °C [1] - 780 870 mV
V
R
= 200 V; pulsed; T
j
= 25 °C [1] - 5 200 nAI
R
reverse current
V
R
= 200 V; pulsed; T
j
= 125 °C [1] - 1.5 20 µA
C
d
diode capacitance V
R
= 4 V; f = 1 MHz; T
j
= 25 °C - 17 - pF
reverse recovery time ;
step recovery
I
F
= 0.5 A; I
R
= 1 A; I
R(meas)
= 0.25 A;
T
j
= 25 °C
- 10 25 ns
I
F
= 1 A; dI
F
/dt = 50 A/µs; V
R
= 30 V;
T
j
= 25 °C
- 20 - ns
t
rr
reverse recovery time ;
ramp recovery
- 16 - ns
I
RM
peak reverse recovery
current
- 1.1 - A
Q
rr
reverse recovery
charge
I
F
= 1 A; dI
F
/dt = 100 A/µs; V
R
= 30 V;
T
j
= 25 °C
- 9 - nC
V
FRM
peak forward recovery
voltage
I
F
= 1 A; dI
F
/dt = 50 A/µs; T
j
= 25 °C - 930 - mV
[1] Very short pulse, in order to maintain a stable junction temperature.
aaa-026625
10
-2
10
-3
1
10
-1
10
I
F
(A)
10
-4
V
F
(V)
0 1.41.0 1.20.80.60.2 0.4
T
j
= 175 °C
T
j
= 150 °C
T
j
= 125 °C
T
j
= 85 °C
T
j
= 25 °C
T
j
= -40 °C
pulsed condition
Fig. 3. Forward current as a function of forward
voltage; typical values
aaa-026626
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
10
-10
10
-11
I
R
(A)
10
-12
V
R
(V)
0 20016080 12040
T
j
= 175 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 85 °C
T
j
= -40 °C
T
j
= 125 °C
pulsed condition
Fig. 4. Reverse current as a function of reverse
voltage; typical values
Nexperia
PNE20020ER
200 V, 2 A hyperfast PN-rectifier
PNE20020ER All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 30 August 2017 6 / 13
V
R
(V)
0 20016080 12040
aaa-026492
20
10
30
40
C
d
(pF)
0
f = 1 MHz; T
amb
= 25 °C
Fig. 5. Diode capacitance as a function of reverse
voltage; typical values
aaa-026714
I
F(AV)
(A)
0 321
1.0
1.5
0.5
2.0
2.5
P
F(AV)
(W)
0
(1)
(2)
(3)
(
4
)
T
j
= 175 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1 (DC)
Fig. 6. Average forward power dissipation as a
function of average forward current; typical
values
V
R
(V)
0 20015050 100
aaa-026628
0.002
0.001
0.003
0.004
P
R(AV)
(W)
0
(1)
(2)
(3)
4
T
j
= 175 °C
(1) δ = 1; DC
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig. 7. Average reverse power dissipation as a
function of reverse voltage; typical values
T
amb
(°C)
0 20015050 100
aaa-026715
1
2
3
I
F(AV)
(A)
0
(1)
(2)
(3)
(
4
)
FR4 PCB, standard footprint
T
j
= 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 8. Average forward current as a function of
ambient temperature; typical values
P1-P3P4-P6P7-P9P10-P12P13-P13

PNE20020ERX

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Manufacturer:
Nexperia
Description:
Rectifiers PNE20020ER/SOD123/SOD2
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