FERD20H60CG-TR Datasheet FERD20H60CG-TR, FERD20H60CTS | P1-P3

September 2017

DocID030963 Rev 1

1/12

This is information on a product in full production.

www.st.com

FERD20H60C

60 V field-effect rectifier diode

Datasheet - production data

Features

 ST advanced rectifier process

 Stable leakage current over reverse voltage

 Reduced leakage current

 Low forward voltage drop

 High frequency operation

Description

The device is based on a proprietary technology

that achieves the best in class V

F

/I

R

trade-off for a

given silicon surface.

This 60 V rectifier has been optimized for use in

confined applications where both efficiency and

thermal performance are key.

This device is suitable for use in adapters and

chargers.

Table 1: Device summary

Symbol

Value

I

F(AV)

2 x 10 A

V

RRM

60 V

V

F

(typ.)

0.39 V

T

j

(max.)

175 °C

TO-220AB

A1

K

A2

K

A2

K

A1

A2

D²PAK

A1

Characteristics

FERD20H60C

2/12

DocID030963 Rev 1

1 Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, per diode, unless otherwise specified)

Symbol

Parameter

Value

Unit

V

RRM

Repetitive peak reverse voltage

60

V

I

F(RMS)

Forward rms current

30

A

I

F(AV)

Average forward current δ = 0.5,

square wave

T

C

= 155 °C

Per diode

10

A

Per device

20

I

FSM

Surge non repetitive forward

current

t

p

= 10 ms sinusoidal

130

A

T

stg

Storage temperature range

-65 to +175

°C

T

j

Maximum operating junction temperature

(1)

+175

°C

Notes:

(1)

(dP

tot

/dT

j

) < (1/R

th(j-a)

) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal resistance parameters

Symbol

Parameter

Max. value

Unit

R

th(j-c)

Junction to case

Per diode

2.2

°C/W

Per device

1.3

R

th(c)

Coupling

0.4

Table 4: Static electrical characteristics, per diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

R

(1)

Reverse leakage current

T

j

= 25 °C

V

R

= V

RRM

-

200

µA

T

j

= 125 °C

-

10

20

mA

T

j

= 125 °C

V

R

= 45 V

-

6

12

V

F

(2)

Forward voltage drop

T

j

= 25 °C

I

F

= 2 A

-

0.34

0.38

V

T

j

= 125 °C

-

0.28

0.315

T

j

= 25 °C

I

F

= 5 A

-

0.415

0.465

T

j

= 125 °C

-

0.39

0.435

T

j

= 25 °C

I

F

= 10 A

-

0.52

0.575

T

j

= 125 °C

-

0.525

0.585

Notes:

(1)

Pulse test: t

p

= 5 ms, δ < 2%

(2)

Pulse test: t

p

= 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.285 x I

F(AV)

+ 0.03 x I

F

2

(RMS)

FERD20H60C

Characteristics

DocID030963 Rev 1

3/12

1.1 Characteristics (curves)

Figure 1: Average forward current versus ambient

temperature (δ = 0.5, per diode)

Figure 2: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 3: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

Figure 4: Junction capacitance versus reverse

voltage applied (typical values, per diode)

Figure 5: Forward voltage drop versus forward

current (typical values, per diode)

Figure 6: Forward voltage drop versus forward

current (typical values, per diode)

0

5

10

15

20

25

0 25 50 75 100 125 150 175

T

amb

(°C)

I

F(AV)

(A)

R

th(j-a)

= R

th(j-c)

T

δ

=tp/T

tp

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

t

p

(s)

Z

th(j-c)

/R

th(j-c)

Single pulse

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0 10 20 30 40 50 60

V

R

(V)

I

R

(mA)

T

j

= 125 °C

T

j

= 25 °C

T

j

= 50 °C

T

j

= 75 °C

T

j

= 100 °C

T

j

= 150 °C

100

1000

10000

1 10 100

V

R

(V)

C(pF)

F = 1 MHz

V

osc

= 30 mV

RMS

T

j

= 25 °C

FERD20H60CG-TR

FERD20H60CG-TR

Products related to this Datasheet