IS31AP4996
Integrated Silicon Solution, Inc. – www.issi.com
Rev. B, 07/23/2013
4
ABSOLUTE MAXIMUM RATINGS (Note 1)
Supply voltage, V
CC
-0.3V ~ +6.0V
Voltage at any input pin -0.3V ~ V
CC
+0.3V
Maximum junction temperature, T
JMAX
150°C
Storage temperature range, T
STG
-65°C ~ +150°C
Operating temperature range, T
A
40°C ~ +85°C
Maximum power dissipation, SOP-8(25°C/85°C) (Note 2)
MSOP-8(25°C/85°C)
720mW/380mW
590mW/310mW
Note 1: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Note 2: Thermal simulation @ 25°C /85°C ambient temperature, still air convection, 2s2p boards according to JESD51. The Pd (max by package)
is evaluated by (Tjmax-Ta)/Theta-Ja.
ELECTRICAL CHARACTERISTICS
The following specifications apply for C
IN
= 0.1F, R
IN
= R
F
= 20k, C
BYPASS
= 0.47F, unless otherwise specified.
Limits apply for T
A
= 25°C. V
CC
=5V (Note 3 or specified)
Symbol Parameter Condition Min. Typ. Max. Unit
I
CC
Quiescent power supply current Io = 0A, no Load 3.0 mA
I
SD
Standby current V
SD
= V
CC
, R
L
= 2 A
V
SD_H
Shutdown voltage input high V
CC
= 5.5V 1.4 V
V
SD_L
Shutdown voltage input low V
CC
= 2.7V 0.4 V
V
OS
Output offset voltage
15 mV
V
OH
Output high voltage V
CC
=3.3V~5.0V, I
OUT
= 75mA V
CC
-0.1 V
V
OL
Output low voltage V
CC
=3.3V~5.0V, I
OUT
= 75mA 0.1 V
I
MAX
Maximum output current
500 mA
Po Output power (8)
THD+N = 1%; f = 1kHz 1.15
W
THD+N = 10%; f = 1kHz 1.40
t
WU
Wake-up time (Note 4) C
BYPASS
= 0.47F 100 250 ms
THD+N
Total harmonic distortion+noise
(Note 4)
Po = 0.5Wrms; f = 1kHz 0.074 %
PSRR
Power supply rejection ratio
(Note 4)
V
ripple p-p
= 200mV
Input Grounded
f = 217Hz 56
dB
f = 1kHz 68
The following specifications apply for C
IN
= 0.1F, R
IN
= R
F
= 20k, C
BYPASS
= 0.47F, unless otherwise specified.
Limits apply for T
A
= 25°C. V
CC
=3V (Note 3 or specified)
Symbol Parameter Condition Min. Typ. Max. Unit
I
CC
Quiescent power supply current Io = 0A, no Load 2.2 mA
I
SD
Standby current V
SD
= V
CC
, R
L
= 2 A
Po Output power (8)
THD+N = 1%; f = 1kHz 380
mW
THD+N = 10%; f = 1kHz 490
t
WU
Wake-up time (Note 4) C
BYPASS
= 0.47F 90 200 ms
THD+N
Total harmonic distortion+noise
(Note 4)
Po = 0.3Wrms; f = 1kHz 0.076
%
Note 3: Production testing of the device is performed at 25°C. Functional operation of the device and parameters specified over other
temperature range, are guaranteed by design, characterization and process control.
Note 4: Guaranteed by design.
