1/9April 2004
■ HIGH SPEED: t
PD
= 3.6ns (TYP.) at V
CC
=5V
■ LOW POWER DISSIPATION:
I
CC
=1µA(MAX.) at T
A
=25°C
■ HIGH NOISE IMMUNITY:
V
NIH
=V
NIL
= 28% V
CC
(MIN.)
■ POWER DOWN PROTECTION ON INPUT
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
|=I
OL
=8mA(MIN)atV
CC
=4.5V
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1G70 is an advanced high-speed CMOS
SINGLE BUFFER fabricated with sub-micron
silicon gate and double-layer metal wiring C
2
MOS
technology.
The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on input and 0
to 7V can be accepted on input with no regard to
the supply voltage. This device can be used to
interface5Vto3V.
74V1G70
SINGLE BUFFER
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-5L 74V1G70STR
SOT323-5L 74V1G70CTR
SOT323-5LSOT23-5L