FDN371N

September 2001
2001 Fairchild Semiconductor Corporation
FDN371N Rev C (W)
FDN371N
20V N-Channel PowerTrench
MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
Load switch
Battery protection
Power management
Features
2.5 A, 20 V. R
DS(ON)
= 50 m @ V
GS
= 4.5 V
R
DS(ON)
= 60 m @ V
GS
= 2.5 V
Low gate charge (7.6 nC typical)
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage
± 12
V
I
D
Drain Current – Continuous (Note 1a) 2.5 A
– Pulsed 10
Power Dissipation for Single Operation (Note 1a) 0.5
P
D
(Note 1b)
0.46
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 250
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 75
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
371 FDN371N 7’’ 8mm 3000 units
FDN371N
FDN371N Rev C (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 µA 20 V
BVDSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA,Referenced to 25°C 13 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 16 V, V
GS
= 0 V 1 µA
I
GSSF
Gate–Body Leakage, Forward V
GS
= 12 V, V
DS
= 0 V 100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= –12 V, V
DS
= 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA 0.5 1.0 1.5 V
VGS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA,Referenced to 25°C
–3 mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 4.5 V, I
D
= 2.5 A
V
GS
= 2.5 V, I
D
= 2.3 A
V
GS
= 4.5V, I
D
= 2.5 A, T
J
= 125°C
22
29
31
50
60
75
m
I
D(on)
On–State Drain Current V
GS
= 4.5V, V
DS
= 5 V 5 A
g
FS
Forward Transconductance V
DS
= 5V, I
D
= 2.5 A 16 S
Dynamic Characteristics
C
iss
Input Capacitance 815 pF
C
oss
Output Capacitance 197 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
106 pF
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 7 14 ns
t
r
Turn–On Rise Time 9 18 ns
t
d(off)
Turn–Off Delay Time 17 31 ns
t
f
Turn–Off Fall Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
5.5 11 ns
Q
g
Total Gate Charge 7.6 10.7 nC
Q
gs
Gate–Source Charge 1.5 nC
Q
gd
Gate–Drain Charge
V
DS
= 10 V, I
D
= 2.5 A,
V
GS
= 4.5 V
2 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current 0.42 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 0.42 A (Note 2) 0.6 1.2 V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in
2
pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDN371N
FDN371N Rev C (W)
Typical Characteristics
0
5
10
15
20
25
30
0 1 2 3 4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
2.0V
3.0V
3.5V
2.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 10 20 30
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 2.0V
4.5V
3.0V
2.5V
3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 2.5A
V
GS
= 4.5V
0.01
0.02
0.03
0.04
0.05
0.06
0.07
1 2 3 4 5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
0.5 1 1.5 2 2.5 3
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN371N

FDN371N

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 20V N-Ch PowerTrench
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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