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NSVBAS21TMR6T1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 1
Publication Order Number:
BAS21TMR6/D
1
BAS21TMR6
High Voltage Switching
Diode
The BAS21TMR6T1G device houses three high−voltage switching
diodes in a SC−74 surface mount package. This device is ideal for
low−power surface mount applications where board space is at a
premium.
Features
• Reduces Board Space
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
R
250 Vdc
Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
625 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1) T
A
= 25°C
Derate above 25°C
P
D
311
2.5
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
JA
402 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
347
2.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
JA
360 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ 10 mm
2
, 2 oz copper traces
2. FR−4 @ 25 mm
2
, 2 oz copper traces
250 V
HIGH VOLTAGE
SWITCHING DIODE
www.onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
SC−74
CASE 318F
1
2
4
3
5
6
MARKING DIAGRAM
BAS21TMR6T1G SC−74
(Pb−Free)
3000 /
Tape & Reel
RAA MG
G
RAA = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
1 23
654
NSVBAS21TMR6T1G SC−74
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NSVBAS21TMR6T2G SC−74
(Pb−Free)
3000 /
Tape & Reel
BAS21TMR6
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
Reverse Voltage Leakage Current
(V
R
= 200 Vdc)
(V
R
= 200 Vdc, T
J
= 150°C)
I
R
−
−
0.1
100
Adc
Reverse Breakdown Voltage (I
BR
= 100 Adc)
V
(BR)
250 − Vdc
Forward Voltage
(I
F
= 100 mAdc)
(I
F
= 200 mAdc)
V
F
−
−
1.0
1.25
Vdc
Diode Capacitance (V
R
= 0, f = 1.0 MHz) C
D
− 5.0 pF
Reverse Recovery Time (I
F
= I
R
= 30 mAdc, I
R(REC)
= 3.0 mAdc, R
L
= 100) t
rr
− 50 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 30 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 30 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820
0.1 F
D.U.T.
V
R
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
I
R(REC)
= 3.0 mA
OUTPUT PULSE
(I
F
= I
R
= 30 mA; MEASURED
at I
R(REC)
= 3.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAS21TMR6
www.onsemi.com
3
TYPICAL CHARACTERISTICS
V
F
, FORWARD VOLTAGE (V)
0.1
10
20
V
R
, REVERSE VOLTAGE (V)
1.0
0.1
0.01
0.001
50 80 110 140
170
1.6
0
V
R
, REVERSE VOLTAGE (V)
1.4
1.0
0.6
0.4
C
D
, DIODE CAPACITANCE (pF)
246 8
I
F
, FORWARD CURRENT (mA)
Figure 2. V
F
vs. I
F
Figure 3. I
R
vs. V
R
Figure 4. Capacitance
I
R
, REVERSE CURRENT (μA)
1.0
10
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
85°C
55°C
150°C
125°C
25°C
-55°C
200 230
0.8
1.2
1357
Cap
-40°C
260
150°C
125°C
85°C
55°C
25°C
P1-P3P4-P4

NSVBAS21TMR6T1G

Mfr. #:
Buy NSVBAS21TMR6T1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching TRIPLE HIGH VTG SWITCH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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