0 25 50 75 100 125 150
T
a
[°C]
T
C
[°C]
t [ms]t [s]
0.001 0.01 0.1 1
0
1000
2000
3000
011
10
4
10
5
0 25 50 75 100 125 150
0
40
80
120
160
200
240
280
I
TSM
[A]
I
TAVM
[A]
0 50 100 150 200 250
0
40
80
120
160
200
240
280
320
360
400
P
tot
[W]
I
TAVM
[A]
0 25 50 75 100 125 1500 100 200 300 400 500
0
200
400
600
800
1000
1200
1400
I
2
dt
[A
2
s]
T
VJ
= 45°C
180° sin
120°
60°
30°
DC
T
VJ
= 125°C
50 Hz
80% V
RRM
T
VJ
= 45°C
T
VJ
= 125°C
R
thKA
K/W
0.3
0.4
0.5
0.6
0.8
1.0
1.4
1.8
P
tot
[W]
I
dAVM
[A]
T
a
[°C]
B6
Circuit
3xMCC132 or
3x MCD132
Fig. 1 Surge overload current I
TSM
,
I
FSM
: Crest value, t: duration
Fig. 2 I
2
t versus time (1-10 ms)
Fig. 3 Max. forward current
at case temperature
Fig. 4 Power dissipation vs. on-state current & ambient temperature
(per thyristor or diode)
Fig. 5 Gate trigger characteristics
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
Fig. 7 Gate trigger delay time
180° sin
120°
60°
30°
DC
R
thKA
K/W
0.2
0.08
0.1
0.15
0.04
0.06
0.03
0.3
0.01 0.1 1 10
0.1
1
10
100
0.01 0.1 1 10
0.1
1
10
100
I
G
[A]
V
G
[V]
I
G
[A]
T
VJ
= 25°C
t
gd
[μs]
I
GT
(T
VJ
= -40°C)
I
GT
(T
VJ
= 0°C)
I
GT
(T
VJ
= 25°C)
125°C
25°C
limit
typ.
t
p
= 30 µs
t
p
= 500 µs
P
GM
= 120 W
60 W
P
GAV
= 8 W
I
GD
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
20160408bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
