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VO223AT

P1-P3P4-P6P7-P7
VO221AT, VO222AT, VO223AT
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 22-Nov-12
1
Document Number: 81954
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Photodarlington Output, Low Input Current,
High Gain, with Base Connection
DESCRIPTION
The VO221AT, VO222AT, VO223AT are high current transfer
ratio (CTR) optocouplers with a gallium arsenide infrared
LED emitter and a silicon NPN photodarlington transistor
detector.
The device has a CTR tested at 1 mA LED current. This low
drive current permits easy interfacing from CMOS to LSTTL
or TTL.
FEATURES
• Isolation test voltage, 4000 V
RMS
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
AGENCY APPROVALS
• UL1577, file no. E52744 system code Y
• cUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-5 (VDE 0884-5) approved, contact
customer service if this option is required
i179022-2
A
C
NC
NC
NC
B
C
E
1
2
3
4
8
7
6
5
C
i179074
ORDERING INFORMATION
VO2 2 #AT
PART NUMBER
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, cUL ≥ 100 ≥ 200 ≥ 500
SOIC-8 VO221AT VO222AT VO223AT
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Peak reverse voltage V
R
6V
Peak forward current 1 μs, 300 pps I
FM
1A
Forward continuous current I
F
60 mA
Power dissipation P
diss
90 mW
Derate linearly from 25 °C 1.2 mW/°C
OUTPUT
Collector emitter breakdown voltage BV
CEO
30 V
Emitter collector breakdown voltage BV
ECO
5V
Collector base breakdown voltage BV
CBO
70 V
I
Cmax. DC
I
Cmax. DC
50 mA
I
Cmax.
t < 1 ms I
Cmax.
100 mA
Power dissipation P
diss
150 mW
SOIC-8
6.1 mm
VO221AT, VO222AT, VO223AT
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 22-Nov-12
2
Document Number: 81954
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
• Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Derate linearly from 25 °C 2mW/°C
Isolation test voltage t = 1 s V
ISO
4000 V
RMS
Total package dissipation
(at 25 °C ambient) (LED and detector)
P
tot
240 mW
Derate linearly from 25 °C 3.2 mW/°C
Storage temperature T
stg
- 40 to + 150 °C
Operating temperature T
amb
- 40 to + 100 °C
Soldering time at 260 °C T
sld
10 s
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 1 mA V
F
11.5V
Reverse current V
R
= 6 V I
R
0.1 100 μA
Capacitance V
R
= 0 V, f = 1 MHz C
O
25 pF
OUTPUT
Collector emitter breakdown voltage I
C
= 100 μA BV
CEO
30 V
Emitter collector breakdown voltage I
C
= 10 μA BV
ECO
5V
Collector base breakdown voltage I
C
= 10 μA BV
CBO
70 V
Collector emitter leackage current V
CE
= 20 V I
CEO
40 nA
Collector base current ICBO 1 nA
Emitter base current I
EBO
1nA
Collector emitter capacitance V
CE
= 10 V C
CE
3.4 pF
Saturation voltage, collector emitter I
CE
= 0.5 mA V
CEsat
1V
COUPLER
Capacitance (input to output) C
IO
0.5 pF
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
I
F
= 1 mA, V
CE
= 5 V
VO221AT CTR
DC
100 %
VO222AT CTR
DC
200 %
VO223AT CTR
DC
500 %
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
VO221AT, VO222AT, VO223AT
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 22-Nov-12
3
Document Number: 81954
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Switching Test Circuit
Note
• As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time V
CC
= 10 V, R
L
= 100 Ω, I
F
= 5 mA t
on
3μs
Turn-off time V
CC
= 10 V, R
L
= 100 Ω, I
F
= 5 mA t
off
3μs
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Climatic classification according to IEC 68 part 1 40/100/21
Polution degree 2
Comparative tracking index CTI 175 399
Isolation test voltage 1 s V
ISO
4000 V
RMS
Peak transient overvoltage V
IOTM
6000 V
Peak insulation voltage V
IORM
560 V
Resistance (input to output) R
IO
10
11
Ω
Safety rating - power output P
SO
350 mW
Safety rating - input current I
SI
150 mA
Safety rating - temperature T
SI
165 °C
External creepage distance 4 mm
External clearance distance 4 mm
Internal creepage distance 3.3 mm
Insulation thickness 0.2 mm
iild223t_09
I
F
t
rise
V
O
t
fall
t
on
t
off
10 %
90 %
50 %
V
O
R
L
V
CC
= 10 V
I
F
= 5 mA
f = 10 kHz,
DF = 50 %
P1-P3P4-P6P7-P7

VO223AT

Mfr. #:
Buy VO223AT
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Optocoupler SOIC8
Lifecycle:
New from this manufacturer.
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