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BC807-25,235
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P20
BC807_BC807W_BC32
7_6
© NXP B.V
. 200
9. All rights rese
rved.
Product data sheet
Rev
. 06 — 17 November 2009
6 of 19
NXP Semiconductors
BC807; BC807W
; BC327
45 V
, 500 mA PNP general-
purpose transistors
V
CE
=
−
1 V
(1)
T
amb
= 150
°
C
(2)
T
amb
= 25
°
C
(3)
T
amb
=
−
55
°
C
V
CE
=
−
1 V
(1)
T
amb
= 150
°
C
(2)
T
amb
= 25
°
C
(3)
T
amb
=
−
55
°
C
Fig 1.
Sele
ction -16: DC
current gain
as a function o
f
collector current; typical valu
es
Fig 2.
Selection -2
5: DC current gain
as a function of
collector
current; ty
pical val
ues
V
CE
=
−
1 V
(1)
T
amb
= 150
°
C
(2)
T
amb
= 25
°
C
(3)
T
amb
=
−
55
°
C
Fig 3.
Selection -40: DC current gain as a function of collector current; typical values
006aaa119
200
100
300
h
FE
0
I
C
(mA)
−
10
−
1
−
10
3
−
10
2
−
1
−
10
(1)
(2)
(3)
006aaa120
400
200
600
h
FE
0
I
C
(mA)
−
10
−
1
−
10
3
−
10
2
−
1
−
10
(1)
(2)
(3)
006aaa121
400
200
600
800
h
FE
0
I
C
(mA)
−
10
−
1
−
10
3
−
10
2
−
1
−
10
(1)
(2)
(3)
BC807_BC807W_BC32
7_6
© NXP B.V
. 200
9. All rights rese
rved.
Product data sheet
Rev
. 06 — 17 November 2009
7 of 19
NXP Semiconductors
BC807; BC807W
; BC327
45 V
, 500 mA PNP general-
purpose transistors
I
C
/I
B
= 10
(1)
T
amb
=
−
55
°
C
(2)
T
amb
= 25
°
C
(3)
T
amb
= 150
°
C
I
C
/I
B
= 10
(1)
T
amb
=
−
55
°
C
(2)
T
amb
= 25
°
C
(3)
T
amb
= 150
°
C
Fig 4.
Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values
Fig 5.
Selection -25: Base-emitter saturation voltage
as a function of collector curre
nt; typical
values
I
C
/I
B
= 10
(1)
T
amb
=
−
55
°
C
(2)
T
amb
= 25
°
C
(3)
T
amb
= 150
°
C
Fig 6.
Selection -40: Base-emitter saturation voltage
as a function of collector current; typical values
006aaa122
I
C
(mA)
−
10
−
1
−
10
3
−
10
2
−
1
−
10
−
1
−
10
V
BEsat
(V)
−
10
−
1
(1)
(2)
(3)
006aaa123
I
C
(mA)
−
10
−
1
−
10
3
−
10
2
−
1
−
10
−
1
−
10
V
BEsat
(V)
−
10
−
1
(1)
(2)
(3)
006aaa124
I
C
(mA)
−
10
−
1
−
10
3
−
10
2
−
1
−
10
−
1
−
10
V
BEsat
(V)
−
10
−
1
(1)
(2)
(3)
BC807_BC807W_BC32
7_6
© NXP B.V
. 200
9. All rights rese
rved.
Product data sheet
Rev
. 06 — 17 November 2009
8 of 19
NXP Semiconductors
BC807; BC807W
; BC327
45 V
, 500 mA PNP general-
purpose transistors
I
C
/I
B
= 10
(1)
T
amb
= 150
°
C
(2)
T
amb
= 25
°
C
(3)
T
amb
=
−
55
°
C
I
C
/I
B
= 10
(1)
T
amb
= 150
°
C
(2)
T
amb
= 25
°
C
(3)
T
amb
=
−
55
°
C
Fig 7.
Selection -16: Collector-emitter saturation
volt
age as a function of collector current;
typical valu
es
Fig 8.
Selection- 25: Collector-emitter satura
tion
volt
age as a function of collect
or current;
typical values
I
C
/I
B
= 10
(1)
T
amb
= 150
°
C
(2)
T
amb
= 25
°
C
(3)
T
amb
=
−
55
°
C
Fig 9.
Selection -40: Collector-emitter saturation volt
age as a function of collector curr
ent; typical values
006aaa125
I
C
(mA)
−
10
−
1
−
10
3
−
10
2
−
1
−
10
−
10
−
1
−
1
V
CEsat
(V)
−
10
−
2
(1)
(2)
(3)
006aaa126
−
10
−
1
−
10
−
2
−
1
V
CEsat
(V)
−
10
−
3
I
C
(mA)
−
10
−
1
−
10
3
−
10
2
−
1
−
10
(1)
(2)
(3)
006aaa127
−
10
−
1
−
10
−
2
−
1
V
CEsat
(V)
−
10
−
3
I
C
(mA)
−
10
−
1
−
10
3
−
10
2
−
1
−
10
(1)
(2)
(3)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P20
BC807-25,235
Mfr. #:
Buy BC807-25,235
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS GP TAPE-13
Lifecycle:
New from this manufacturer.
Delivery:
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